Abstract
In this paper, Pd modified and unmodified ZnO thin film sensors were prepared by sol-gel process for detection of hydrogen (H2) gas. Spin-coating (1200 rpm, duration 10 s) method was used to deposit the sol on above the SiO2/p-Si substrate. The surface morphology was analyzed by field emission scanning electron microscopy (FESEM). The gas sensing characteristic was measured by 50–250 °C operating temperature and 100–3000 ppm H2 gas concentration. Maximum sensitivity was found 74% at operating temperature 150 °C for 1000 ppm of H2 gas concentration. Stability of Pd modified and unmodified ZnO thin film sensors has been measured at operating temperature 150 °C. Pd modified ZnO thin film sensor with Ag contact was found highest sensitivity compared to the unmodified ZnO thin film sensor with Ag contact.
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Acknowledgements
One of the authors thankfully acknowledges the financial support for this research work obtained from UGC UPE Phase II (Device and System Ref. No.-R-11/108/16) sponsored project. The authors would like to thank prof. Kalyan Kumar Chattopadhyay (Director, School of Material Science and Nanotechnology, Jadavpur University, India) for FESEM facility.
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Barua, S., Dey, A., Roy, S., Sarkar, S.K. (2018). Comparative Study of n-ZnO/SiO2/p-Si and Pd/n-ZnO/SiO2/p-Si Thin Film-Based H2 Sensor Fabricated by Sol-gel Process. In: Bera, R., Sarkar, S., Chakraborty, S. (eds) Advances in Communication, Devices and Networking. Lecture Notes in Electrical Engineering, vol 462. Springer, Singapore. https://doi.org/10.1007/978-981-10-7901-6_10
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DOI: https://doi.org/10.1007/978-981-10-7901-6_10
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