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Intelligent Engineering Informatics pp 533–539Cite as

Performance Scrutiny of Source and Drain-Engineered Dual-Material Double-Gate (DMDG) SOI MOSFET with Various High-K

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Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 695))

Abstract

The source and drain engineering on dual-metal dual-gate (DMDG)-based 50 nm SOI MOSFET for various high-k gate oxides has been investigated in this work to improve its electrical performance. The proposed structure is designed by modifying source and drain (MSMD) side, and its performance is evaluated on ATLAS device simulator. The effect of this heterogeneous doping on source and drain side of the DMDG transistor led to the reduction of leakage current, decreases DIBL effectively, and improves ION current, thereby enabling the proposed device appropriate for low-power digital applications.

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Author information

Authors and Affiliations

  1. Department of Electronics and Communication, Madan Mohan Malviya University of Technology, Gorakhpur, India

    Himanshu Yadav & R. K. Chauhan

Authors
  1. Himanshu Yadav
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  2. R. K. Chauhan
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Corresponding author

Correspondence to Himanshu Yadav .

Editor information

Editors and Affiliations

  1. Department of Electronics and Communication Engineering, SRMGPC, Lucknow, Uttar Pradesh, India

    Vikrant Bhateja

  2. Departamento de Computación, CINVESTAV-IPN, Mexico City, Mexico

    Carlos A. Coello Coello

  3. Department of Computer Science and Engineering, PVP Siddhartha Institute of Technology, Vijayawada, Andhra Pradesh, India

    Suresh Chandra Satapathy

  4. School of Computer Engineering, KIIT University, Bhubaneswar, Odisha, India

    Prasant Kumar Pattnaik

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Yadav, H., Chauhan, R.K. (2018). Performance Scrutiny of Source and Drain-Engineered Dual-Material Double-Gate (DMDG) SOI MOSFET with Various High-K. In: Bhateja, V., Coello Coello, C., Satapathy, S., Pattnaik, P. (eds) Intelligent Engineering Informatics. Advances in Intelligent Systems and Computing, vol 695. Springer, Singapore. https://doi.org/10.1007/978-981-10-7566-7_53

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  • DOI: https://doi.org/10.1007/978-981-10-7566-7_53

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-7565-0

  • Online ISBN: 978-981-10-7566-7

  • eBook Packages: EngineeringEngineering (R0)

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