Abstract
In this paper, we have studied theoretically the effect of width variation of quantum well on energy dispersion curves and transverse electric (TE) and transverse magnetic (TM) Intraband optical absorption coefficients in type-II InAs/AlSb nanoscale heterostructure by utilizing eight bands Kohn–Luttinger Hamiltonian. The outcomes of the calculations made in this work suggest that the optical absorption and transition energies can be enhanced by reducing the width of quantum well (active) region of the designed heterostructure. One more observation is that the polarization modes have no effect on the behaviour of change in transition energy with change in well width.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Moschetti G, Zhao H, Nilsson P-Ă…, Wang S, Kalabukhov A, Dambrine G, Bollaert S, Desplanque L, Wallart X, Grahn J (2010) Anisotropic transport properties in InAs/AlSb heterostructures. Appl Phys Lett 97:243510
Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG (2005) Antimonide-based compound semiconductors for electronic devices: a review. Solid State Electron 49:1875
Klokolov KI, Ning CZ (2003) Doping induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. Appl Phys Lett 83(8):1581
Ren S-F, Shen J (1997) Ab initio pseudopotential calculations of InAs/AlSb heterostructures. J Appl Phys 81:1169
Alvi PA (2017) Transformation of type-II InAs/AlSb nano-scale heterostructure into type-I structure and improving interband optical gain. Phys Status Solidi B. https://doi.org/10.1002/pssb.201600572
Alvi PA, Gupta S, Sharma M, Jha S, Rahman F (2011) Computational modeling of novel InN/Al0.30 In0.70 N multilayer nano-heterostructure. Physics E 44:49
Nirmal HK, Yadav N, Rahman F, Alvi PA (2015) Optimization of high optical gain in type-II In0.70 Ga0.30 As/GaAs0.40Sb0.60lasing nano-heterostructure for SWIR applications. Superlattices and Microstruct 88:154–160
Chuang SL (1995) Physics of optoelectronic devices. Wiley, NY
Acknowledgements
P. A. Alvi and Nisha Yadav are grateful to “Banasthali Center for Research and Education in Basic Sciences” under CURIE programme supported by the DST, Government of India, New Delhi. Authors are also thankful to Dr. Konstantin I. Kolokolov (Physics Department, Moscow State University, Moscow, Russia) for supporting the research work.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Yadav, N., Bhardwaj, G., Anjum, S.G., Sandhya, K., Siddiqui, M.J., Alvi, P.A. (2018). Quantum Well Width Effect on Intraband Optical Absorption in Type-II InAs/AlSb Nano-Scale Heterostructure. In: Janyani, V., Tiwari, M., Singh, G., Minzioni, P. (eds) Optical and Wireless Technologies. Lecture Notes in Electrical Engineering, vol 472. Springer, Singapore. https://doi.org/10.1007/978-981-10-7395-3_22
Download citation
DOI: https://doi.org/10.1007/978-981-10-7395-3_22
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-7394-6
Online ISBN: 978-981-10-7395-3
eBook Packages: EngineeringEngineering (R0)