Abstract
Indium Phosphide material-based trench gate power MOSFET has been proposed as an efficient power device for low to medium voltage power applications. Use of Indium Phosphide material, because of its larger band gap, improves the OFF-state performance, like increased breakdown voltage and reduced OFF-state leakage current. On the other hand, its high electron mobility and diffusivity result in higher drive current capability, which in turn, significantly improves the transconductance and reduces ON-state resistance. Using 2D numerical simulations, we have shown that the proposed Indium Phosphide-based trench MOSFET shows 36% improvement in breakdown voltage, 75% reduction in ON resistance and 400% improvement in peak transconductance as compared to the equivalent Si trench MOSFET of ~50 V class.
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Tahalyani, G., Saxena, R.S., Vigneswaran, T. (2018). High Performance Trench Gate Power MOSFET of Indium Phosphide. In: Labbé, C., Chakrabarti, S., Raina, G., Bindu, B. (eds) Nanoelectronic Materials and Devices. Lecture Notes in Electrical Engineering, vol 466. Springer, Singapore. https://doi.org/10.1007/978-981-10-7191-1_16
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DOI: https://doi.org/10.1007/978-981-10-7191-1_16
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