Abstract
Shrinking transistor sizes has been the most feasible and effective approach to reduce power and delay of MOSFETs for decades. However, by reaching the nanoscale dimensions, silicon is facing limitations for downscaling such as short-channel effects. As a result, new device concepts such as graphene FETs are being introduced as alternatives to silicon. Since graphene has a zero bandgap, graphene nanoribbon of this material has been introduced to open a bandgap, which was the focus of this study.
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Amiri, I.S., Ghadiry, M. (2018). Conclusion and Future Works on High-Voltage Application of Graphene. In: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-10-6550-7_5
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DOI: https://doi.org/10.1007/978-981-10-6550-7_5
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Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-6549-1
Online ISBN: 978-981-10-6550-7
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