Abstract
Based on the proposed semi-analytical models in the previous chapter, lateral electric field and length of velocity saturation region are plotted with respect to structural parameters in this chapter. In addition, ionization coefficient is calculated with respect to inverse electric field. Finally, the breakdown voltage is calculated for DG- and SG-GNRFETs and the trends and profiles are discussed. Table 4.1 shows default values for all the parameters which can be used for repeating the experiments.
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Amiri, I.S., Ghadiry, M. (2018). Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor. In: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-10-6550-7_4
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DOI: https://doi.org/10.1007/978-981-10-6550-7_4
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