Doping of Graphene Using Low Energy Ion Beam Irradiation and Its Properties
Doping of graphene can open the zero band gap of graphene and regulate the electrical properties. Based on the interaction mechanisms achieved in Chap. 3, the feasibility of graphene doping by low energy nitrogen irradiation was experimentally proved in this chapter, and the doping mechanism was explained by atomistic simulation. Besides, the influence of aggregation, the defects and the type of doping elements on the mechanical properties of graphene were also investigated. And the electronic transport properties of doped graphene were studied with consideration of the influence of doping type and doping site.