Abstract
The thesis presents a systematic research work of the chemical mechanical polishing (CMP) of Ru as a novel diffusion barrier layer for sub-14 nm technology node of the integrated circuit.
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Cheng, J. (2018). Conclusions and Recommendations. In: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect . Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-6165-3_8
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DOI: https://doi.org/10.1007/978-981-10-6165-3_8
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Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-6164-6
Online ISBN: 978-981-10-6165-3
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