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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect pp 29–48Cite as

Material Removal Mechanism of Cu in KIO4-Based Slurry

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Abstract

This chapter presents a study of the Cu surface chemistry and mechanics in a KIO4-based slurry. On this basis, the material removal mechanism of Cu is proposed based on the chemical-mechanical synergism theory. The results show that the Cu surface films formed in the slurry are complex and vary considerably as a function of the solution pH. Based on the surface film analysis and CMP experimental results, it can be concluded that the controlling factor during Cu CMP in a KIO4-based slurry is the chemical-mechanical synergistic effect. A high MRR and ideal surface quality could be obtained when abrasion-enhanced corrosion and corrosion-enhanced abrasion effects are high and balanced. Therefore, the weak alkaline slurries are the ideal polishing slurry during the P3 stage of Cu polishing.

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Authors and Affiliations

  1. State Key Laboratory of Tribology, Tsinghua University, Beijing, China

    Jie Cheng

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  1. Jie Cheng
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Correspondence to Jie Cheng .

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Cheng, J. (2018). Material Removal Mechanism of Cu in KIO4-Based Slurry. In: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect . Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-6165-3_2

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  • DOI: https://doi.org/10.1007/978-981-10-6165-3_2

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-6164-6

  • Online ISBN: 978-981-10-6165-3

  • eBook Packages: EngineeringEngineering (R0)

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