Dynamic Secondary Ion Mass Spectrometry

  • Mitsuhiro TomitaEmail author


Ion beam bombardment with energy of less than a few tens of kiloelectron volts (primary ion bombardment) onto the sample surface causes sputtering phenomena following cascade mixing in the near-surface of the sample.


Primary ion Secondary ion Sputtering Impurity Depth profile 


  1. 1.
    Wittmaack, K.: Artifacts in low-energy depth profiling using oxygen primary ion beams: dependence on impact angle and oxygen flooding conditions. J. Vac. Sci. Technol., B 16, 2776–2785 (1998)CrossRefGoogle Scholar
  2. 2.
    Jiang, Z.X., Lerma, J., Sieloff, D., Lee, J.J., Backer, S., Bagchi, S., Conner, J.: Ultrahigh resolution secondary ion mass spectrometry profiling with oblique O2+ beams below 200 eV. J. Vac. Sci. Technol., B 22, 630–635 (2004)CrossRefGoogle Scholar
  3. 3.
    Surface chemical analysis—secondary-ion mass spectrometry—method for depth calibration for silicon using multiple delta-layer reference materials. ISO 23812 (2009)Google Scholar
  4. 4.
    Tomita, M., Hongo, C., Suzuki, M., Takenaka, M., Murakoshi, A.: Ultra-shallow depth profiling with secondary ion mass spectrometry. J. Vac. Sci. Technol., B 22, 317–322 (2004)CrossRefGoogle Scholar
  5. 5.
    Surface chemical analysis—secondary-ion mass spectrometry—determination of relative sensitivity factors from ion-implanted reference materials. ISO 18114 (2003)Google Scholar

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© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Advanced LSI Technology LaboratoryCorporate Research & Development Center, Toshiba Corp.KawasakiJapan

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