Abstract
The charge injection occurs from contact metals into semiconductors can be inefficient process i.e., non-ohmic. This is due to significant difference amid work function of contact metal and lowest unoccupied molecular orbit (LUMO)/highest occupied molecular orbit (HOMO) level of n/p-organic semiconductor (OSC). Therefore, the contacts in OTFT drop a noteworthy sum of voltage due to occurrence of contact resistance. The effect of contact resistance can be observed at low channel length devices. The electrical characteristics and parameter extractions are done for SG-OTFT at various channel lengths, and the results are observed and analysed using organic module of Atlas 2-D simulator.
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Nautiyal, S., Nautiyal, P., Negi, S., Mittal, P. (2018). Contact Resistance-Dependent OTFT Behaviour: Effect of Channel Length. In: Singh, R., Choudhury, S., Gehlot, A. (eds) Intelligent Communication, Control and Devices. Advances in Intelligent Systems and Computing, vol 624. Springer, Singapore. https://doi.org/10.1007/978-981-10-5903-2_12
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DOI: https://doi.org/10.1007/978-981-10-5903-2_12
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