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Comparison Between the Performance of Trigate Junctionless Transistor and Double-Gate Junctionless Transistor with Same Device Length

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Intelligent Communication, Control and Devices

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 624))

Abstract

In this paper, we have compared double-gate junctionless transistor and trigate junctionless transistor for electrical parameters like Ion, Ioff, Ion/Ioff ratio, threshold voltage, drain-induced barrier lowering (DIBL). In CMOS technology, as we reduce the device dimensions, its performance gets affected due to short channel effects as well as leakage current. To minimize these short channel effects, different types of devices are introduced by the researchers. Junctionless transistor is a new CMOS technology and is easier to fabricate too. Junctionless transistor is a heavily doped semiconductor device which has gate electrode which is the controlling terminal [1]. Operation of junctionless transistor relies on the fully depletion of the semiconductor using the work function of the gate material to turn the device off [1]. If the number of gates is increased in a transistor device, it will provide the better control of the flow of current in the channel of the device. For the comparison of devices, various simulations were carried out using TCAD software.

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Authors and Affiliations

  1. University Institute of Engineering and Technology, Panjab University, Chandigarh, 160014, India

    Deepti Singh, Renu Vig, Charu Madhu & Ravneet Kaur

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  1. Deepti Singh
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  2. Renu Vig
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  3. Charu Madhu
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  4. Ravneet Kaur
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Editor information

Editors and Affiliations

  1. Institute of Robotics Technology (R&D), University of Petroleum and Energy Studies, Dehradun, Uttarakhand, India

    Rajesh Singh

  2. Department of Electronics & Instrumentation Engineering, University of Petroleum and Energy Studies, Dehradun, Uttarakhand, India

    Sushabhan Choudhury

  3. Department of Electronics & Instrumentation Engineering, University of Petroleum and Energy Studies, Dehradun, Uttarakhand, India

    Anita Gehlot

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Singh, D., Vig, R., Madhu, C., Kaur, R. (2018). Comparison Between the Performance of Trigate Junctionless Transistor and Double-Gate Junctionless Transistor with Same Device Length. In: Singh, R., Choudhury, S., Gehlot, A. (eds) Intelligent Communication, Control and Devices. Advances in Intelligent Systems and Computing, vol 624. Springer, Singapore. https://doi.org/10.1007/978-981-10-5903-2_104

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  • DOI: https://doi.org/10.1007/978-981-10-5903-2_104

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  • Online ISBN: 978-981-10-5903-2

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