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Fabrication and Investigation of Low-Voltage Programmable Flash Memory Gate Stack

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Proceedings of the International Conference on Microelectronics, Computing & Communication Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 453))

Abstract

In this paper, fabrication, characterization, and analysis of a FGMOS gate stack employing ultra-thin tunnel oxide of 3 nm thickness are discussed. Apart from basic C-V and G-V profiles, high-frequency hysteresis curve has been investigated and device-level parameters are extracted. Use of ultra-thin tunnel oxide has facilitated direct tunneling mechanism at program/erase voltages of 10 V for 200 ms and −8 V for 40 ms, respectively. Excellent memory window of 1.2 V has been obtained. Frequency-dependent capacitance and reliability-related profiles are also studied. The device is useful for power-efficient non-real-time applications like data logging, biometric security, backup servers.

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Acknowledgements

This device was fabricated and characterized at IIT Bombay Nano-Fabrication Centre (IITB-NF), Mumbai, India.

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Authors and Affiliations

  1. Electronics Engineering Department, SVNIT, Surat, India

    Rasika Dhavse, Kumar Prashant, Chetan Dabhi & Anand Darji

  2. Electronics Engineering Department, VNIT, Nagpur, India

    R. M. Patrikar

Authors
  1. Rasika Dhavse
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  2. Kumar Prashant
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  3. Chetan Dabhi
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  4. Anand Darji
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  5. R. M. Patrikar
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Corresponding author

Correspondence to Rasika Dhavse .

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Editors and Affiliations

  1. Department of Electronics & Communicatio, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India

    Vijay Nath

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Dhavse, R., Prashant, K., Dabhi, C., Darji, A., Patrikar, R.M. (2018). Fabrication and Investigation of Low-Voltage Programmable Flash Memory Gate Stack. In: Nath, V. (eds) Proceedings of the International Conference on Microelectronics, Computing & Communication Systems. Lecture Notes in Electrical Engineering, vol 453. Springer, Singapore. https://doi.org/10.1007/978-981-10-5565-2_4

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  • DOI: https://doi.org/10.1007/978-981-10-5565-2_4

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-5564-5

  • Online ISBN: 978-981-10-5565-2

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