Abstract
The ordinary LD with an F-P cavity composed of cleaved facets works often in multiple longitudinal modes; and the mode frequency is susceptible to pump levels and environmental conditions. To make it working in a single longitudinal mode, especially in case of high frequency modulations, it is necessary to insert a wavelength selective element in the cavity. Three monolithically integrated semiconductor lasers with excellent characteristics of single longitudinal mode operation are introduced in this Chapter: the distributed feedback (DFB) laser , the distributed Bragg reflector (DBR) laser, and the vertical cavity surface emitting laser (VCSEL) in three sections, respectively. All of them are based on the principle of Bragg refraction, but have different characteristics.
References
Kogelnik H, Shank CV (1971) Stimulated emission in a periodic structure. Appl Phys Lett 18:152–154
Kogelnik H, Shank CV (1972) Coupled-wave theory of distributed feedback lasers. J Appl Phys 43(5):2327–2335
Scifres DR, Burnham RD, Streifer W (1974) Distributed-feedback single heterojunction GaAs diode laser. Appl Phys Lett 25:203–206
Ghafouri-Shiraz H, Lo BSK (1996) Distributed feedback laser diodes. Wiley
Yariv A (1997) Optical electronics in modern communications. Chapter 16. 5th edn, Oxford University Press, Inc
Carroll JE, Plumb D, Whiteaway J (1998) Distributed feedback semiconductor lasers. Institution of Electrical Engineers
Yariv A (1973) Coupled-mode theory for guided-wave optics. IEEE J Quantum Electron 9(9):919–933
Haus HA, Shank CV (1976) Antisymmetric taper of distributed feedback lasers. IEEE J Quantum Electron 12(9):532–539
Utaka K, Akiba S, Sakai K et al (1984) Analysis of quarter-wave-shifted DFB laser. Electron Lett 20(8):326–327
Kojima K, Kyuma K, Nakayama T (1985) Analysis of the spectral linewidth of distributed feedback laser diodes. J Lightwave Technol 3(5):1048–1055
Vankwikelberge P, Buytaert F, Franchois A et al (1989) Analysis of the carrier-induced FM response of DFB lasers: theoretical and experimental case studies. IEEE J Quantum Electron 25(11):2239–2254
Hirayama Y, Morinaga M, Onomura M et al (1992) High-speed 1.5 μm compressively strained multi-quantum well self-aligned constricted mesa DFB lasers. J Lightwave Technol 10(9):1272–1280
Wu M, Lou Y, Wang S (1988) Linewidth broadening due to longitudinal spatial hole burning in a long distributed feedback laser. Appl Phys Lett 52(14):1119–1121
Kimura T, Sugimura A (1987) Linewidth reduction by coupled phase-shift distributed-feedback lasers. Electron Lett 23(19):1014–1015
Rabinovich WS, Feldman BJ (1989) Spatial hole burning effects in distributed feedback lasers. IEEE J Quantum Electron 25(1):20–30
Nakano Y, Tada K (1998) Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation. IEEE J Quantum Electron 24(10):2017–2033
Agrawal GP, Bobeck AH (1988) Modeling of distributed feedback semiconductor lasers with axially-varying parameters. IEEE J Quantum Electron 24(12):2407–2414
Rennon S, Bach L, Reithmaier JP et al (2001) Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology. IEEE J Sel Top Quantum Electron 7(2):306–311
Zhang LM, Yu SF, Nowell MC et al (1994) Dynamic analysis of radiation and side-mode suppression in a second-order DFB laser using time-domain large-signal traveling wave model. IEEE J Quantum Electron 30(6):1389–1395
Yu SF (1996) A quasi-three-dimensional large-signal dynamic model of distributed feedback lasers. IEEE J Quantum Electron 32(3):424–432
Luo Y, Nakano Y, Tada K et al (1991) Fabrication and characteristics of gain-coupled distributed semiconductor lasers with a corrugated active layer. IEEE J Quantum Electron 27(6):1724–1731
Broberg B, Nilsson S (1988) Widely tunable active Bragg reflector integrated lasers in InGaAsP/InP. Appl Phys Lett 52(16):1285–1287
Coldren LA, Fish GA, Akulova Y et al (2004) Tunable semiconductor lasers: a tutorial. J Lightwave Technol 22(1):193–202
Todt R, Jacke T, Meyer R et al (2004) Wide wavelength tuning of sampled grating tunable twin-guide laser diodes. Electron Lett 40(23):1491–1492
Numai T (1992) 1.5 μm phase-controlled distributed feedback wavelength tunable optical filter. IEEE J Quantum Electron 28(6):1508–1512
Numai T (1992) 1.5 μm phase-shift-controlled distributed feedback wavelength tunable optical filter. IEEE J Quantum Electron 28(6):1513–1519
Fang Z, Chin K, Qu R et al (2012) Fundamentals of optical fiber sensors. Wiley
Tohmori Y, Yoshikuni Y, Ishii H et al (1993) Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers. IEEE J Quantum Electron 29(6):1817–1823
Kano F, Ishii H, Tohmori Y et al (1993) Characteristics of super structure grating (SSG) DBR lasers under broad range wavelength tuning. IEEE Photonics Technol Lett 5(6):611–613
Tohmori Y, Yoshikuni Y, Ishii H (1993) Over 100 nm wavelength tuning in superstructure grating (SSG) DBR lasers. Electron Lett 29(4):352–354
Morthier G, Moeyersoon B, Baets R (2001) A λ/4-shifted sampled or superstructure grating widely tunable twin-guide laser. IEEE Photonics Technol Lett 13(10):1052–1054
Ward AJ, Robbins DJ, Busico G et al (2005) Widely tunable DS-DBR laser with monolithically integrated SOA: design and performance. IEEE J Sel Top in Quantum Electron 11(1):149–152
Ishii H, Tanobe H, Kano F et al (1996) Quasicontinuous wavelength tuning in super-structure-grating (SSG) DBR lasers. IEEE J Quantum Electron 32(3):433–441
Akulova YA, Fish GA, Koh P et al (2002) Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter. IEEE J Sel Top Quantum Electron 8(6):1349–1357
Phelan R, Guo W, Lu Q et al (2008) A novel two-section tunable discrete mode Fabry-Pérot laser exhibiting nanosecond wavelength switching. IEEE J Quantum Electron 44(4):331–337
Fricke J, Bugge F, Ginolas A et al (2010) High-power 980-nm broad-area lasers spectrally stabilized by surface Bragg gratings. IEEE Photonics Technol Lett 22(5):284–286
Jewell JL, Harbison JP, Scherer A et al (1991) Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization. IEEE J Quantum Electron 27(6):1332–1345
Geels RS, Corzine SW, Coldren LA (1991) InGaAs vertical-cavity surface-emitting lasers. IEEE J Quantum Electron 27(6):1359–1367
Hasnain G, Tai K, Yang L et al (1991) Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors. IEEE J Quantum Electron 27(6):1377–1385
Grabherr M, King R, Jäger R et.al. (2008) Volume production of polarization controlled single-mode VCSELs. Proceeding SPIE 6908:690803(1–9)
Seurin J, Xu G, Khalfin V et.al. (2009) Progress in high-power high-efficiency VCSEL arrays. Proceeding SPIE 7229:722903(1–11)
Jayaraman J, Jiang J, Potsaid B et al (2012) Design and performance of broadly tunable, narrow line-width, high repetition rate 1310 nm VCSELs for swept source optical coherence tomography. Proc SPIE 8276:82760D(1–11)
Lee TP (ed) (1995) Current trends in vertical cavity surface emitting lasers. World Scientific Publishing Co., Singapore
Li HE, Iga K (ed) (2003) Vertical-cavity Surface-emitting laser devices. Springer
Yu SF (2003) Analysis and design of vertical-cavity surface-emitting lasers. Wiley
Morgan RA (1997) Vertical-cavity surface-emitting lasers: present and future. Proc SPIE 3003:14–26
Chow WW, Choquette KD, Crawford MH et al (1997) Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers. IEEE J Quantum Electron 33(10):1810–1824
Michalzik R, Grabherr M, Jäger R et al (1998) Progress in high power VCSELs and arrays. Proc SPIE 3419:187–195
Born M, Wolf E (1999) Principles of optics. Seventh edn. Cambridge University Press
Yeh HJ, Smith JS (1994) Integration of GaAs vertical cavity surface emitting laser on Si by substrate removal. Appl Phys Lett 64(12):1466–1468
Babi DI, Dudley JJ, Streubel K et al (1995) Double fused 1.52 m vertical cavity lasers. Appl Phys Lett 66(9):1030–1032
Iga K (2000) Surface-emitting laser—its birth and generation of new optoelectronics field. IEEE J Sel Top Quantum Electron 6(6):1201–1205
Lu TC, Kao CC, Kuo HC et al (2008) CW lasing of current injection blue GaN-based vertical cavity surface emitting laser. Appl Phys Lett 92(14):141102(1–3)
Alford WJ, Raymond TD, Allerman AA (2002) High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser. J Opt Soc of Am B 19(4):663–666
Mereuta A, Iakovlev V, Caliman A et al (2008) In(Al)GaAs-AlGaAs wafer fused VCSELs emitting at 2 μm wavelength. IEEE Photonics Technol Lett 20(1):24–26
Michalzik R, Ebeling KJ (1993) Modeling and design of proton-implanted ultralow-threshold vertical-cavity laser diodes. IEEE J Quantum Electron 29(6):1963–1973
Yang GM, MacDougal MH, Dapkus PD (1995) Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation. Electron Lett 31(11):886–888
Huffaker DL, Deppe DG (1997) Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active region. Appl Phys Lett 71(11):1449–1451
Yoshikawa H, Kosaka H, Kurihara K et al Complete polarization control of 8 × 8 vertical cavity surface emitting laser matrix arrays. Appl Phys Lett 66(8):908–910
Verschuuren MA, Gerlach P, van Sprang HA et al (2011) Improved performance of polarization-stable VCSELs by monolithic sub-wavelength gratings produced by soft nano-imprint lithography. Nanotechnol 22:505201(1–9)
Miah MJ, Al-Samaneh A, Kern A et al (2013) Fabrication and characterization of low-threshold polarization-stable VCSELs for Cs-based miniaturized atomic clocks. IEEE J Sel Top in Quantum Electron 19(4):1701410(1–10)
Chou SY, Schablitsky S, Zhuang L (1997) Subwavelength transmission gratings and their applications in VCSELs. Proc SPIE 3290:73–81
Debernardi P, Ostermann JM, Feneberg M et al (2005) Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study. IEEE J Sel Top Quantum Electron 11(1):107–116
Chang-Hasnain CJ (2000) Tunable VCSEL. IEEE J Sel Top Quantum Electron 6(6):978–987
Huang MCY, Zhou Y, Chang-Hasnain CJ (2008) A nanoelectromechanical tunable laser. Nat Photonics 2:180–184
Gierl C, Gruendl T, Debernardi P et al (2011) Surface micromachined tunable 1.55 μm-VCSEL with 102 nm continuous single-mode tuning. Opt Express 19(18):17336–17343
Chang YC, Wang CS, Coldren LA (2007) High-efficiency, high-speed VCSELs with 35 Gbit/s error-free operation. Electron Lett 43(19):1022–1023
Imai S, Takaki K, Kamiya S et al (2011) Recorded low power dissipation in highly reliable 1060-nm VCSELs for “green” optical interconnection. IEEE J Sel Top Quantum Electron 17(6):1614–1620
Moser P, Hofmann W, Wolf P et al (2011) 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects. Appl Phys Lett 98:231106(1–3)
Moser P, Lott JA, Wolf P et al (2012) 99 fJ/(bit km) energy to data-distance ratio at 17 Gb/s across 1 km of multimode optical fiber with 850-nm single-mode VCSELs. IEEE Photonics Technol Lett 24(1):19–21
Osinski M, Nakwaski W (1995) Thermal effects in vertical-cavity surface-emitting lasers. Selected paper of “Current Trends in Vertical Cavity Surface Emitting Lasers”. In: Lee TP (ed) World Scientific Publishing Co., Singapore
Mooradian A. (2001). High brightness cavity-controlled surface emitting GaInAs lasers operating at 980 nm. Proc OFC PD17–3, Anahaim, USA
Westbergh P, Gustavsson JS, Haglund A et al (2008) Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s. Electron Lett 44(15):907–908
Al-Samaneh A, Renz S, Strodl A et al (2010) Polarization-stable single-mode VCSELs for Cs-based MEMS atomic clock applications. Proc SPIE 7702:770206(1–14)
Gustavsson J, Westbergh P, Szczerba K et al (2010) High-speed 850-nm VCSELs for 40 Gb/s transmission. Proc SPIE 7720:772002(1–11)
Mutig A, Lott JA, Blokhin SA et al (2011) Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85°C. IEEE J Sel Top Quantum Electron 17(6):1568–1575
Miller M, Grabherr M, Jäger R et al (2001) High-power VCSEL arrays for emission in the watt regime at room temperature. IEEE Photonics Technol Lett 13(3):173–175
Tatum JA, Johnson RH, Guenter JK et al (2010) High data throughput VCSELs. Proc SPIE 7720:772004(1–6)
Karim A, Björlin S, Pipre J et al (2011) Long-wavelength vertical-cavity lasers and amplifiers. IEEE J Sel Top Quantum Electron 6(6):1244–1253
Keeler GA, Geib KM, Serkland DK et al (2007) VCSEL polarization control for chip-scale atomic clocks. Sandia Report
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Fang, Z., Cai, H., Chen, G., Qu, R. (2017). Monolithically Integrated Semiconductor Lasers. In: Single Frequency Semiconductor Lasers . Optical and Fiber Communications Reports, vol 9. Springer, Singapore. https://doi.org/10.1007/978-981-10-5257-6_4
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