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Atomic and Electronic Structures of h-BN-G Interfaces

  • Mengxi LiuEmail author
Chapter
  • 435 Downloads
Part of the Springer Theses book series (Springer Theses)

Abstract

Notably, the physical characteristics of h-BN-G heterostructures are related to the linking type in the interface. Thus, it becomes an important subject that how to form particular-type boundaries during growth process and how to identify the atomic linking type. This chapter mainly introduces the study of interface type and interfacial electron state of h-BN-G heterostructures.

References

  1. 1.
    Dong G, Fourré EB, Tabak FC, Frenken JWM (2010) How boron nitride forms a regular nanomesh on Rh(111). Phys Rev Lett 104:096102CrossRefGoogle Scholar
  2. 2.
    Ma T, Ren W, Zhang X, Liu Z, Gao Y, Yin LC, Ma XL, Ding F, Cheng HM (2013) Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition. Proc Natl Acad Sci 110:20386CrossRefGoogle Scholar
  3. 3.
    Sekerka RF (2005) Equilibrium and growth shapes of crystals: how do they differ and why should we care? Cryst Res Technol 40:291CrossRefGoogle Scholar
  4. 4.
    Gao J, Yip J, Zhao J, Yakobson BI, Ding F (2011) Graphene nucleation on transition metal surface: structure transformation and role of the metal step edge. J Am Chem Soc 133:5009CrossRefGoogle Scholar
  5. 5.
    Shu H, Chen X, Tao X, Ding F (2012) Edge structural stability and kinetics of graphene chemical vapor deposition growth. ACS Nano 6:3243CrossRefGoogle Scholar
  6. 6.
    Liu L, Park J, Siegel DA, McCarty KF, Clark KW, Deng W, Basile L, Carlos Idrobo J, Li AP, Gu G (2014) Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 343:163CrossRefGoogle Scholar
  7. 7.
    Phark S, Borme J, León Vanegas A, Corbetta M, Sander D, Kirschner J (2012) Scanning tunneling spectroscopy of epitaxial graphene nanoisland on Ir(111). Nanoscale Res Lett 7:255Google Scholar
  8. 8.
    Drost R, Uppstu A, Schulz F, Hämäläinen SK, Ervasti M, Harju A, Liljeroth P (2014) Electronic states at the graphene-hexagonal boron nitride zigzag interface. Nano Lett 14:5128CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Center for NanochemistryCollege of Chemistry and Molecular Engineering, Peking UniversityBeijingPeople’s Republic of China
  2. 2.National Center for Nanoscience and TechnologyChinese Academy of SciencesBeijingPeople’s Republic of China

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