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Controlled Synthesis of in-Plane h-BN-G Heterostructures

  • Mengxi LiuEmail author
Chapter
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Part of the Springer Theses book series (Springer Theses)

Abstract

The heterostructure of graphene and h-BN is predicted to show many excellent physical properties, such as, bandgap opening, ultra-high carrier mobility, antiferromagnetic and half-semimetallic characteristics. In the first section of this chapter, I will give a brief review of the novel properties and the reported synthesis methods of h-BN-G heterostructures. The process of preparation of h-BN-G in-plane heterostructures is maturing, but some important basic scientific problems are still not solved. For example, the atomic structures and electronic properties on the interface between graphene and h-BN. The second section of this chapter introduces the UHV two-step growth method and the weak influence substrate Ir(111) single crystal with little electron doping effect on graphene.

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Center for NanochemistryCollege of Chemistry and Molecular Engineering, Peking UniversityBeijingPeople’s Republic of China
  2. 2.National Center for Nanoscience and TechnologyChinese Academy of SciencesBeijingPeople’s Republic of China

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