Controlled Synthesis of in-Plane h-BN-G Heterostructures
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The heterostructure of graphene and h-BN is predicted to show many excellent physical properties, such as, bandgap opening, ultra-high carrier mobility, antiferromagnetic and half-semimetallic characteristics. In the first section of this chapter, I will give a brief review of the novel properties and the reported synthesis methods of h-BN-G heterostructures. The process of preparation of h-BN-G in-plane heterostructures is maturing, but some important basic scientific problems are still not solved. For example, the atomic structures and electronic properties on the interface between graphene and h-BN. The second section of this chapter introduces the UHV two-step growth method and the weak influence substrate Ir(111) single crystal with little electron doping effect on graphene.
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