Abstract
Silicon carbo-nitride thin films were deposited on Si (100) substrate by thermal chemical vapour deposition using C2H2 and Si powder precursors. The thin films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy and Raman spectroscopy. The FTIR spectra reveals the presence of vibration signature of various bonds at 512, 1135, 1688, 2444, 3032, 3550 cm−1 which correspond to Si–N, SiC–N, C–N, Si–H, C–H and N–H, respectively, in the SiCN thin films. Raman spectra reveal the presence of three prominent stoke shifts at 617, 1141 and 1648 cm−1 corresponding to Si–H, SiC–N and C–C respectively. The vibrational signature of SiC–N shifted from 1126 to 1050 cm−1 with increase in H2 flow rate indicates formation of nanosized cluster in deposited thin film .
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Kumar, D., Rizal, U., Das, S., Swain, B.S., Swain, B.P. (2018). Micro-Raman and FTIR Analysis of Silicon Carbo-Nitride Thin Films at Different H2 Flow Rate. In: Kalam, A., Das, S., Sharma, K. (eds) Advances in Electronics, Communication and Computing. Lecture Notes in Electrical Engineering, vol 443. Springer, Singapore. https://doi.org/10.1007/978-981-10-4765-7_9
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