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Advances in Electronics, Communication and Computing pp 103–114Cite as

Triple Gate SOI MOSFET

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 443))

Abstract

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) had been one of the best devices designed for integrated circuits over the decades. Due to continuous downscaling of the transistor the short-channel effects comes into play and further scaling becomes difficult. So, Multi-gate devices have been proposed so as to reduce these effects. Analytical modeling of Tri-gate MOSFET by solving Poisson’s equation and necessary boundary condition is proposed in this paper. Surface potential for Tri-gate SOI MOSFET has been obtained and the effects of the device parameters like oxide thickness, different oxide material, channel length, gate voltage and drain voltage are plotted using MATLAB simulator.

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Author information

Authors and Affiliations

  1. Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India

    Amit Agarwal & P. C. Pradhan

  2. Centre for Material Science and Nano Technology, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India

    Bibhu Prasad Swain

Authors
  1. Amit Agarwal
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  2. P. C. Pradhan
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  3. Bibhu Prasad Swain
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Corresponding author

Correspondence to Amit Agarwal .

Editor information

Editors and Affiliations

  1. Smart Energy Research Unit, College of Engineering and Science, Victoria University, Melbourne, VIC, Australia

    Akhtar Kalam

  2. Electronics and Communication Sciences Unit, Indian Statistical Institute, Kolkata, West Bengal, India

    Swagatam Das

  3. Department of Computer Science and Engineering, Sikkim Manipal Institute of Technology, Rangpo, Sikkim, India

    Kalpana Sharma

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Agarwal, A., Pradhan, P.C., Swain, B.P. (2018). Triple Gate SOI MOSFET. In: Kalam, A., Das, S., Sharma, K. (eds) Advances in Electronics, Communication and Computing. Lecture Notes in Electrical Engineering, vol 443. Springer, Singapore. https://doi.org/10.1007/978-981-10-4765-7_12

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  • DOI: https://doi.org/10.1007/978-981-10-4765-7_12

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-4764-0

  • Online ISBN: 978-981-10-4765-7

  • eBook Packages: EngineeringEngineering (R0)

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