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Raman Characterization of Gallium Nitride Nanowires Deposited by Chemical Vapor Deposition

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Advances in Power Systems and Energy Management

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 436))

Abstract

Gallium Nitride Nanowires (GaN-NWs) were synthesized on p-type c-Si(100) by thermal chemical vapor deposition (CVD) using Ag, Fe, In, Ni as catalysts. These NWs were synthesized with variation of H2 flow rate from 40 to 120 standard cubic per centimeter (sccm) while maintaining constant flow of N2 gas at 120 sccm. FESEM, FTIR, Raman and photoluminescence spectroscopy were used to characterize the GaN-NWs for microstructure, vibrational and optical properties. The microstructure of GaN-NWs reveals thin and hairy nanowires for Ag and In catalysts while long and thick NWs were observed for Fe and Ni catalyst. Raman spectra reveal that the peak position of A1(LO), A1(TO) phonon shifted to higher frequency from 705.37 to 716.58 and 520.94 to 528.71 cm−1, whereas E1(TO) phonon shows pronounced red shift from 544.36 to 540.60 cm−1. In a similar sideline, fwhm of A1(LO), A1(TO) phonon increases from 13.11 to 21.01 cm−1 and 16.99 to 20.78 cm−1, whereas fwhm decreases for E1(LO) and E1(TO) phonon. We have found Surface Optic (SO) phonon of GaN-NWs at 610 cm−1 in FTIR spectra. Room temperature photoluminescence (PL) spectra show a prominent blue luminescence from GaN-NWs.

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Acknowledgements

This study was financially supported by the Department of Science and Technology (Project No: SB/FTP/ETA-295/2011) and Department of Biotechnology (Project No: BCIL/NER-BPMC/2012/650), Govt. of India. Umesh Rizal acknowledges financial support from JRF scheme under the Department of Biotechnology, Government of India.

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Authors and Affiliations

  1. Nano-Processing Laboratory, Centre for Material Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo, East Sikkim, India

    Umesh Rizal & Bibhu P. Swain

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  1. Umesh Rizal
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  2. Bibhu P. Swain
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Correspondence to Bibhu P. Swain .

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Editors and Affiliations

  1. Sikkim Manipal Institute of Technology (SMIT), Rangpo, Sikkim, India

    Amik Garg

  2. Department of Electrical and Electronics Engineering, Sikkim Manipal Institute of Technology (SMIT), Rangpo, Sikkim, India

    Akash Kumar Bhoi

  3. Department of Electrical and Electronics Engineering Science, University of Johannesburg, Johannesburg, South Africa

    Padmanaban Sanjeevikumar

  4. Government of Karnataka, Chitradurga, Karnataka, India

    K. K. Kamani

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Rizal, U., Swain, B.P. (2018). Raman Characterization of Gallium Nitride Nanowires Deposited by Chemical Vapor Deposition. In: Garg, A., Bhoi, A., Sanjeevikumar, P., Kamani, K. (eds) Advances in Power Systems and Energy Management. Lecture Notes in Electrical Engineering, vol 436. Springer, Singapore. https://doi.org/10.1007/978-981-10-4394-9_6

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  • DOI: https://doi.org/10.1007/978-981-10-4394-9_6

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