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Ti–Sb–Te-Based Phase Change Memory Chip

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Part of the Springer Theses book series (Springer Theses)

Abstract

This chapter discusses some challenges faced in the fabrication processes of the Ti0.43Sb2Te3-based PCM chip. Ti0.43Sb2Te3-based PCM test chips have been successfully fabricated by using 40-nm CMOS technology and demonstrated ~0.2 mA Set current, ~0.7 mA low Reset current and above 106 cycling endurance, which directly proves the feasible application of TST in PCM.

Keywords

Adhesion Strength Phase Change Material High Resistance State Phase Change Memory Transmission Electron Microcopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    F. Rao, Z. Song, K. Ren, X. Zhou, Y. Cheng, L. Wu, B. Liu, Nanotechnology 22, 145702 (2011)ADSCrossRefGoogle Scholar
  2. 2.
    Z. Song, Y. Zhan, D. Cai, B. Liu, Y. Chen, J, Ren. Nano-Micro Lett. 7(2), 172–176 (2015)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2017

Authors and Affiliations

  1. 1.Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina

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