Abstract
This chapter addresses the influence of Ti concentration on the material and device performances of Ti-doped Sb2Te3 based PCM, including thermal stability, density change, thermal conductivity, crystalline structure, required voltage, and endurance characteristic. Ti0.43Sb2Te3 material has been proved to the optimal component to ensure good overall properties of PCM.
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Zhu, M. (2017). Component Optimization of Ti for Ti–Sb–Te Alloy. In: Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-4382-6_3
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DOI: https://doi.org/10.1007/978-981-10-4382-6_3
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