Abstract
Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-channel effects. To subdue them, we design FinFET using TCAD tools, which has superior control over the channel and displays higher performance even after scaling to lower dimensions.
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References
SUNG MO (STEVE) ANG and Yusuf Leblebigi.: CMOS Digital Integrated Circuits Analysis and Design.
Vaidy Subramanian, Bertrand Parvais, Jonathan Borremans, Abdelkarim Mercha, Dimitri Linten, Piet Wambacq.: Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective, IEEE Transactions on Electron Devices.
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http://www.inst.eecs.berkeley.edu/~ee130/sp06/chp7full.pdf: MOSFET Technology Scaling, Leakage Current, and Other Topics.
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Ijjada, S.R., Mannepalli, C., Hameed Pasha, M. (2018). FinFET Modelling Using TCAD. In: Satapathy, S., Bhateja, V., Chowdary, P., Chakravarthy, V., Anguera, J. (eds) Proceedings of 2nd International Conference on Micro-Electronics, Electromagnetics and Telecommunications. Lecture Notes in Electrical Engineering, vol 434. Springer, Singapore. https://doi.org/10.1007/978-981-10-4280-5_21
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DOI: https://doi.org/10.1007/978-981-10-4280-5_21
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