Abstract
We report the fabrication and characterization of a 320 × 256 infrared focal-plane imager fabricated using an strain-coupled quaternary capped InAs quantum dots heterostructure, which showed multiple photoluminescence peak and activation energy of 207.38 meV for dominant peak. Multiple ground state peaks in photoluminescence spectra indicates multimodal dot size distribution which was confirmed using cross-sectional transmission microscopy images. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 6.9 µm and narrow spectral linewidth of 19%. The highest detectivity of 2.48 × 1010 cm Hz1/2/W at 77 K was observed from proposed structure. Using the fabricated device, infrared images were captured at 50–100 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 0.080 °C at 100 K.
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Acknowledgements
The authors acknowledge the financial support provided by the National Center of Excellence in Technology for Internal Security (NCETIS), Department of Science and Technology (DST) Nanomission, Indian Space Research Organization (ISRO) and DST, India. We would also like to acknowledge IIT-Bombay’s Nanofabrication Facility and Riber, France.
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Ghadi, H., Rawool, H., Goma Kumari, K.C., Chakrabarti, S. (2017). Design and Fabrication of 320 × 256 Focal-Plane Array Using Strain-Coupled Quaternary Capped InAs/GaAs Quantum Dots Infrared Photo-Detectors for Thermal Imaging. In: Prabaharan, S., Thalmann, N., Kanchana Bhaaskaran, V. (eds) Frontiers in Electronic Technologies. Lecture Notes in Electrical Engineering, vol 433. Springer, Singapore. https://doi.org/10.1007/978-981-10-4235-5_6
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DOI: https://doi.org/10.1007/978-981-10-4235-5_6
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