Abstract
Dependence of conductance on equivalent circuit parameters in single electron transistor is analytically computed for electrical performance estimation. Distorted conductance profiles are obtained when a few passive components exceeds threshold limit, and negative spikes are also possible, as revealed from simulation. Steady-state master equation is solved with appropriate boundary conditions when source and drains are connected via quantum dot, which ensures tunneling process. Fermi Golden Rule is applied to calculate probabilistic values of all stochastic processes and effect of source and drain resistances and capacitances as well as gate capacitance are considered for determining conductance. Simulated findings are important for practical application of SET as infrared detector and charge sensor.
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Paul, A., Chakraborty, R., Deyasi, A., Nayak, S. (2018). Unusual Conductance Characteristics in Single Electron Transistor. In: Bhattacharyya, S., Sen, S., Dutta, M., Biswas, P., Chattopadhyay, H. (eds) Industry Interactive Innovations in Science, Engineering and Technology . Lecture Notes in Networks and Systems, vol 11. Springer, Singapore. https://doi.org/10.1007/978-981-10-3953-9_9
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DOI: https://doi.org/10.1007/978-981-10-3953-9_9
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