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Unusual Conductance Characteristics in Single Electron Transistor

  • Arkadeep PaulEmail author
  • Ritabrata Chakraborty
  • Arpan Deyasi
  • Shrabani Nayak
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 11)

Abstract

Dependence of conductance on equivalent circuit parameters in single electron transistor is analytically computed for electrical performance estimation. Distorted conductance profiles are obtained when a few passive components exceeds threshold limit, and negative spikes are also possible, as revealed from simulation. Steady-state master equation is solved with appropriate boundary conditions when source and drains are connected via quantum dot, which ensures tunneling process. Fermi Golden Rule is applied to calculate probabilistic values of all stochastic processes and effect of source and drain resistances and capacitances as well as gate capacitance are considered for determining conductance. Simulated findings are important for practical application of SET as infrared detector and charge sensor.

Keywords

Single electron transistor Conductance Coulomb blockade Quantum dot Distorted profile Negative spikes 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Arkadeep Paul
    • 1
    Email author
  • Ritabrata Chakraborty
    • 1
  • Arpan Deyasi
    • 1
  • Shrabani Nayak
    • 1
  1. 1.Department of Electronics and Communication EngineeringRCC Institute of Information TechnologyKolkataIndia

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