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Effect of Surface-to-Volume Ratio on Eigenenergy in Quantum Ring

  • Swapan BhattacharyyaEmail author
  • Sourish Haldar
  • Arpan Deyasi
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 11)

Abstract

Eigenenergies of lowest three quantum states in semiconductor quantum ring is analytically determined as a function of surface-to-volume ratio subject to the application of external electric field applied along the axis of the ring, which is perpendicular to ring plane. n-GaAs material is considered for simulation, and the results are compared with that obtained in the absence of field. Result shows that with increasing S/V ratio, energy increases almost linearly in the presence of field, whereas the behavior is nonlinear when field is absent. Critical finding in this respect is that intersubband transition remains constant with increasing S/V ratio, which speaks about its candidature as optical emitter/detector within dimensional variation over nanorange. Variation is also calculated for different surface areas and volume of nanodevice. Result speaks about possible tuning of the eigenenergy by external field in IR wavelength region.

Keywords

Surface-to-volume ratio Eigenenergy Transition energy Electric field Structural parameters 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Swapan Bhattacharyya
    • 1
    Email author
  • Sourish Haldar
    • 2
  • Arpan Deyasi
    • 3
  1. 1.Department of Electronics and Communication EngineeringJIS College of EngineeringKalyaniIndia
  2. 2.Department of Electronics and Communication EngineeringNIT DurgapurDurgapurIndia
  3. 3.Department of Electronics and Communication EngineeringRCC Institute of Information TechnologyKolkataIndia

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