Abstract
Eigenenergies of lowest three quantum states in semiconductor quantum ring is analytically determined as a function of surface-to-volume ratio subject to the application of external electric field applied along the axis of the ring, which is perpendicular to ring plane. n-GaAs material is considered for simulation, and the results are compared with that obtained in the absence of field. Result shows that with increasing S/V ratio, energy increases almost linearly in the presence of field, whereas the behavior is nonlinear when field is absent. Critical finding in this respect is that intersubband transition remains constant with increasing S/V ratio, which speaks about its candidature as optical emitter/detector within dimensional variation over nanorange. Variation is also calculated for different surface areas and volume of nanodevice. Result speaks about possible tuning of the eigenenergy by external field in IR wavelength region.
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Bhattacharyya, S., Haldar, S., Deyasi, A. (2018). Effect of Surface-to-Volume Ratio on Eigenenergy in Quantum Ring. In: Bhattacharyya, S., Sen, S., Dutta, M., Biswas, P., Chattopadhyay, H. (eds) Industry Interactive Innovations in Science, Engineering and Technology . Lecture Notes in Networks and Systems, vol 11. Springer, Singapore. https://doi.org/10.1007/978-981-10-3953-9_8
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DOI: https://doi.org/10.1007/978-981-10-3953-9_8
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