Abstract
The development of smooth (0001) GaN films on c-plane sapphire [1] and the activation of p-dopants in GaN [2] led very quickly to the realization of high brightness InGaN LEDs on c-plane sapphire substrates [3, 4]. Already at the end of the last century blue and green LEDs with tens and hundreds of milli-Watt output power levels were demonstrated. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of c-plane InGaN QW LEDs has been pushed into the yellow and even red spectral range. Although the performance characteristics of c-plane LEDs seem excellent, the strong polarization fields at InGaN/GaN heterointerfaces can lead to a significant deterioration of the device performance. This polarization field is suppressed or reduced in LEDs with InGaN/GaN heterointerfaces of nonpolar or semipolar orientation, respectively. Triggered by the first demonstration of nonpolar GaN quantum wells grown on LiAlO\(_2\) by Waltereit and colleagues in 2000 [5], impressive advancements in the field of non- and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields exhibiting exceptional optical properties have been demonstrated, and the fundamental understanding of polar, semipolar, and nonpolar nitrides has made significant leaps forward. This chapter is intended to provide an overview on the epitaxial growth and optical properties of group-III-nitride LEDs on non- and semipolar surface orientations [6]. After introducing the physical origins of piezoelectric and spontaneous polarization effects in group-III nitrides, different approaches for the heteroepitaxial growth of low defect density non- and semipolar (Al, In)GaN layers and (Al, In)GaN/GaN heterointerfaces are presented, followed by a discussion of the effect of surface orientation on the indium incorporation efficiency in InGaN layers and quantum wells. In the third section, the polarized light emission characteristics and the optical properties of non- and semipolar InGaN QWs are discussed and finally the performance characteristics of non- and semipolar LEDs are presented including the effects on droop, wavelength shift, and external quantum efficiencies of state-of-the-art devices.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki, Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga\(_{1-{\rm {x}}}\)Al\(_{\rm {x}}\)N \((0 < x\,{\le }\,0.4)\) films grown on sapphire substrate by MOVPE. J. Cryst. Growth 98, 209–219 (1989)
I. Akasaki, H. Amano, Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode. Jpn. J. Appl. Phys. 45, 9001–9010 (2006)
S. Nakamura, T. Mukai, M. Senoh, Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64(13), 1687 (1994)
S. Nakamura, M. Senoh, N. Iwasa, S.-I. Nagahama, High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn. J. Appl. Phys. 34, L797–L799 (1995)
P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K.H. Ploog, Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865 (2000)
J. Han, M. Kneissl, Non-polar and semipolar nitride semiconductors. Semicond. Sci. Technol. 27, 020301 (2012)
F. Bernardini, V. Fiorentini, D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 56(16), 10024–10027 (1997)
O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. Eastman, Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J. Phys.: Condens. Matter 14, 3399–3434 (2002)
O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85(6), 3222 (1999)
D.S. Sizov, R. Bhat, A. Zakharian, J. Napierala, K. Song, D. Allen, C.-E. Zah, Impact of carrier transport on aquamarine-green laser performance. Appl. Phys. Express 3, 122101 (2010)
D.S. Sizov, R. Bhat, A. Zakharian, K. Song, D.E. Allen, S. Coleman, C.-E. Zah, Carrier transport in InGaN MQWs of aquamarine- and green-laser diodes. IEEE J. Sel. Top. Quantum Electron. 17, 1390–1401 (2011)
W.G. Scheibenzuber, GaN-Baser Laser Diodes-Towards Longer Wavelengths and Short Pulses (Springer, Heidelberg, 2012)
S. Park, S. Chuang, Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors. Phys. Rev. B 59(7), 4725–4737 (1999)
M. Feneberg, F. Lipski, R. Sauer, K. Thonke, T. Wunderer, B. Neubert, P. Brückner, F. Scholz, Piezoelectric fields in GaInN/GaN quantum wells on different crystal facets. Appl. Phys. Lett. 89(24), 242112 (2006)
M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, F. Scholz, Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates. J. Appl. Phys. 107(10), 103517 (2010)
M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, T. Mukai, Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells. Appl. Phys. Express 3, 071001 (2010)
T. Paskova, K. Evans, GaN substrates–progress, status, and prospects. IEEE J. Sel. Top. Quantum Electron. 15, 1041–1052 (2009)
K. Fujito, S. Kubo, I. Fujimura, Development of bulk GaN crystals and nonpolar/semipolar substrates by HVPE. MRS Bull. 34, 313–317 (2009)
K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu, H. Seki, Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate. Jpn. J. Appl. Phys. 40(Part 2, No. 2B), L140–L143 (2001)
K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, H. Seki, Growth and characterization of freestanding GaN substrates. J. Cryst. Growth 237–239, Part 2(0), 912–921 (2002). The Thirteenth International Conference on Crystal Growth in Conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy
R. Kucharski, M. Zajac, R. Doradzinski, M. Rudzinski, R. Kudrawiec, R. Dwilinski, Non-polar and semi-polar ammonothermal GaN substrates. Semicond. Sci. Technol. 27(2), 024007 (2012)
M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, S.P. DenBaars, Structural characterization of nonpolar \((11\overline{2}0)\) a-plane GaN thin films grown on \((1\overline{1}02)\) r-plane sapphire. Appl. Phys. Lett. 81(3), 469–471 (2002)
M.D. Craven, F. Wu, A. Chakraborty, B. Imer, U.K. Mishra, S.P. DenBaars, J.S. Speck, Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition. Appl. Phys. Lett. 84(8), 1281–1283 (2004)
T.J. Baker, B.A. Haskell, F. Wu, P.T. Fini, J.S. Speck, S. Nakamura, Characterization of planar semipolar gallium nitride films on spinel substrates. Jpn. J. Appl. Phys. 44(29), L920–L922 (2005)
T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S. Nakamura, Characterization of planar semipolar gallium nitride films on sapphire substrates. Jpn. J. Appl. Phys. 45(6), L154–L157 (2006)
S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl, Orientation control of GaN \(\{11\overline{2}2\}\) and \(\{10\overline{1}3\}\) grown on \((10\overline{1}0)\) sapphire by metal-organic vapor phase epitaxy. J. Cryst. Growth 312(15), 2171–2174 (2010)
S. Ploch, J.B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl, Single phase \(\{11\overline{2}2\}\) GaN on \((10\overline{1}0)\) sapphire grown by metal-organic vapor phase epitaxy. J. Cryst. Growth 331(1), 25–28 (2011)
N. Okada, K. Tadatomo, Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates. Semicond. Sci. Technol. 27(2), 024003 (2012)
N. Okada, H. Oshita, K. Yamane, K. Tadatomo, High-quality \(\{20\overline{2}1\}\) GaN layers on patterned sapphire substrate with wide-terrace. Appl. Phys. Lett. 99(24), 242103 (2011)
T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki, Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE. J. Cryst. Growth 237–239, Part 2(0), 1099–1103 (2002). The Thirteenth International Conference on Crystal Growth in Conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi, Growth and properties of semi-polar GaN on a patterned silicon substrate. J. Cryst. Growth 311(10), 2867–2874 (2009)
R. Ravash, P. Veit, M. Müller, G. Schmidt, A. Dempewolf, T. Hempel, J. Bläsing, F. Bertram, A. Dadgar, J. Christen, A. Krost, Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113). Phys. Status Solidi (C) 9(3–4), 507–510 (2012)
T. Wernicke, S. Ploch, V. Hoffmann, A. Knauer, M. Weyers, M. Kneissl, Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates. Phys. Status Solidi (B) 248(3), 574–577 (2011)
T. Wernicke, Wachstum von nicht- und semipolaren InAlGaN-Heterostrukturen für hocheffiziente Lichtemitter/Growth of GaN-based Non- and Semipolar Heterostructures for High Efficiency Light Emitters. Dissertation, Technische Universität Berlin (2010)
S. Ploch, T. Wernicke, D.V. Dinh, M. Pristovsek, M. Kneissl, Surface diffusion and layer morphology of \((11\overline{2}2)\) GaN grown by metal-organic vapor phase epitaxy. J. Appl. Phys. 111(3), 033526 (2012)
R.M. Farrell, E.C. Young, F. Wu, S.P. DenBaars, J.S. Speck, Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices. Semicond. Sci. Technol. 27(2), 024001 (2012)
T.S. Zheleva, O.-H. Nam, M.D. Bremser, R.F. Davis, Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Appl. Phys. Lett. 71(17), 2472–2474 (1997)
T. Wernicke, U. Zeimer, C. Netzel, F. Brunner, A. Knauer, M. Weyers, M. Kneissl, Epitaxial lateral overgrowth on \((2\overline{11}0)\) a-plane GaN with \([0\overline{1}11]\)-oriented stripes. J. Cryst. Growth 311(10), 2895–2898 (2009). Proceedings of the 2nd International Symposium on Growth of III Nitrides
C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, M. Kneissl, Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations. J. Cryst. Growth 310(1), 8–12 (2008)
B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy. Appl. Phys. Lett. 92(21), 212111 (2008)
Z.H. Wu, A.M. Fischer, F.A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of nonpolar GaN thin films. Appl. Phys. Lett. 92(17), 171904 (2008)
Y. Kawashima, K. Murakami, Y. Abe, N. Okada, K. Tadatomo, Growth mechanism of nonpolar m-plane GaN on maskless patterned a-plane sapphire substrate. Phys. Status Solidi (C) 7(7–8), 2066–2068 (2010)
A. Dadgar, R. Ravash, P. Veit, G. Schmidt, M. Müller, A. Dempewolf, F. Bertram, M. Wieneke, J. Christen, A. Krost, Eliminating stacking faults in semi-polar GaN by AlN interlayers. Appl. Phys. Lett. 99(2), 021905 (2011)
F. Scholz, Semipolar GaN grown on foreign substrates: a review. Semicond. Sci. Technol. 27(2), 024002 (2012)
J.E. Northrup, GaN and InGaN \((11\overline{2}2)\) surfaces: group-III adlayers and indium incorporation. Appl. Phys. Lett. 95(13), 133107 (2009)
T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, M. Kneissl, Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells. Semicond. Sci. Technol. 27(2), 024014 (2012)
N.F. Gardner, J.C. Kim, J.J. Wierer, Y.C. Shen, M.R. Krames, Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes. Appl. Phys. Lett. 3–5 (2005)
H. Masui, H. Yamada, K. Iso, S. Nakamura, S.P. DenBaars, Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between \((10\overline{1}0)\) and \((10\overline{11})\) planes. Appl. Phys. Lett. 92(9), 091105 (2008)
L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, On the optical polarization properties of semipolar InGaN quantum wells. Appl. Phys. Lett. 99(5), 051103 (2011)
H. Jönen, H. Bremers, T. Langer, U. Rossow, A. Hangleiter, Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC. Appl. Phys. Lett. 100(15), 151905 (2012)
M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, Polarization switching phenomena in semipolar In\(_x\)Ga\(_{1-x}\)N/GaN quantum well active layers. Phys. Rev. B 78, 2–5 (2008)
S. Chuang, C. Chang, \(k\cdot p\) method for strained wurtzite semiconductors. Phys. Rev. B 54, 2491–2504 (1996)
W. Scheibenzuber, U. Schwarz, R. Veprek, B. Witzigmann, A. Hangleiter, Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes. Phys. Rev. B 80, 115320 (2009)
K. Kojima, H. Kamon, M. Funato, Y. Kawakami, Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells. Phys. Status Solidi (C) 5, 3038–3041 (2008)
L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells. Phys. Status Solidi (B) 248, 638–646 (2011)
T. Ohtoshi, A. Niwa, T. Kuroda, Crystal orientation effect on valence-subband structures in wurtzite-GaN strained quantum wells. Jpn. J. Appl. Phys. Part 2 Lett. 35, 1566–1568 (1996)
L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, Auger effect in nonpolar quantum wells. Proc. SPIE 8262(0), 82620K–82620K–9 (2012)
H. Masui, H. Asamizu, A. Tyagi, N.F. DeMille, S. Nakamura, S.P. DenBaars, Correlation between optical polarization and luminescence morphology of \((11\overline{2}2)\)-oriented InGaN/GaN quantum-well structures. Appl. Phys. Express 2, 071002 (2009)
W.G. Scheibenzuber, U.T. Schwarz, Polarization switching of the optical gain in semipolar InGaN quantum wells. Phys. Status Solidi (B) 248, 647–651 (2011)
C. Roberts, Q. Yan, M.-S. Miao, C.G. Van de Walle, Confinement effects on valence-subband character and polarization anisotropy in \((11\overline{2}2)\) semipolar InGaN/GaN quantum wells. J. Appl. Phys. 111(7), 073113 (2012)
A.E. Romanov, T.J. Baker, S. Nakamura, J.S. Speck, Strain-induced polarization in wurtzite III-nitride semipolar layers. J. Appl. Phys. 100(2), 023522 (2006)
M. Funato, D. Inoue, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, Strain states in semipolar III-nitride semiconductor quantum wells. J. Appl. Phys. 107(12), 123501 (2010)
Q. Yan, P. Rinke, M. Scheffler, C.G. Van de Walle, Role of strain in polarization switching in semipolar InGaN/GaN quantum wells. Appl. Phys. Lett. 97(18), 181102 (2010)
T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar \(\{20\overline{2}1\}\) GaN substrates. Appl. Phys. Express 3(1), 011003 (2010)
Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R.B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C.G.V. de Walle, J.S. Speck, S.P. DenBaars, S. Nakamura, High optical polarization ratio from semipolar \((20\overline{21})\) blue-green InGaN/GaN light-emitting diodes. Appl. Phys. Lett. 99(5), 051109 (2011)
H. Masui, H. Yamada, K. Iso, S. Nakamura, S.P. DenBaars, Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure. J. Phys. D: Appl. Phys. 41, 225104 (2008)
I. Vurgaftman, J.R. Meyer, Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94, 3675 (2003)
E. Kuokstis, J.W. Yang, G. Simin, M.A. Khan, R. Gaska, M.S. Shur, Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells. Appl. Phys. Lett. 80(6), 977–979 (2002)
M.C. Schmidt, K.-C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S.P. DenBaars, J.S. Speck, High power and high external efficiency \(m\)-plane InGaN light emitting diodes. Jpn. J. Appl. Phys. 46(7), L126–L128 (2007)
Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J.S. Speck, S.P. DenBaars, S. Nakamura, High-power blue-violet semipolar (\(20\overline{21}\)) InGaN/GaN light-emitting diodes with low efficiency droop at 200 a/cm\(^{2}\). Appl. Phys. Express 4(8), 082104 (2011)
J. Piprek, Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi (A) 207(10), 2217–2225 (2010)
Y.C. Shen, G.O. Mueller, S. Watanabe, N.F. Gardner, A. Munkholm, M.R. Krames, Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91(14), 141101 (2007)
M.-H. Kim, M.F. Schubert, Q. Dai, J.K. Kim, E.F. Schubert, J. Piprek, Y. Park, Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91(18), 183507 (2007)
A. David, M.J. Grundmann, Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96(10), 103504 (2010)
J. Hader, J.V. Moloney, S.W. Koch, Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. Appl. Phys. Lett. 96(22), 221106 (2010)
E. Kioupakis, P. Rinke, K.T. Delaney, C.G.V. de Walle, Indirect auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett. 98(16), 161107 (2011)
C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J.S. Speck, S. Nakamura, S.P. DenBaars, D. Feezell, High-power, low-efficiency-droop semipolar (\(20\overline{21}\)) single-quantum-well blue light-emitting diodes. Appl. Phys. Express 5(6), 062103 (2012)
M. Krames, O. Shchekin, R. Mueller-Mach, G. Mueller, L. Zhou, G. Harbers, M. Craford, Status and future of high-power light-emitting diodes for solid-state lighting. J. Disp. Technol. 3, 160–175 (2007)
A. Laubsch, M. Sabathil, J. Baur, M. Peter, B. Hahn, High-power and high-efficiency InGaN-based light emitters. IEEE Trans. Electron Devices 57, 79–87 (2010)
E. Matioli, S. Brinkley, K.M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch, Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals. Appl. Phys. Lett. 98(25), 251112 (2011)
J. Rass, T. Wernicke, W.G. Scheibenzuber, U.T. Schwarz, J. Kupec, B. Witzigmann, P. Vogt, S. Einfeldt, M. Weyers, M. Kneissl, Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN. Phys. Status Solidi (RRL)—Rapid Res. Lett. 4, 1–3 (2010)
J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, M. Kneissl, Polarization dependent study of gain anisotropy in semipolar InGaN lasers. Appl. Phys. Lett. 99(17), 171105 (2011)
J.C. Raß, Charakterisierung von InGaN-basierten Lichtemittern auf semipolaren und nichtpolaren Halbleiteroberflächen/Characterization of InGaN-based light emitters on semipolar and nonpolar semiconductor orientations. Dissertation, Technische Universität Berlin (2012)
C.-Y. Huang, A. Tyagi, Y.-D. Lin, M.T. Hardy, P.S. Hsu, K. Fujito, J.-S. Ha, H. Ohta, J.S. Speck, S.P. DenBaars, S. Nakamura, Propagation of spontaneous emission in birefringent m-axis oriented semipolar \((11\overline{2}2)\) (Al, In, Ga)N waveguide structures. Jpn. J. Appl. Phys. 49, 010207 (2010)
T. Wunderer, P. Bruckner, B. Neubert, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, K. Thonke, Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes. Appl. Phys. Lett. 89(4), 041121 (2006)
F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, GaInN-based LED structures on selectively grown semi-polar crystal facets. Phys. Status Solidi (A) 207(6), 1407–1413 (2010)
T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, A.D. Dräger, A. Hangleiter, F. Scholz, Three-dimensional GaN for semipolar light emitters. Phys. Status Solidi (B) 248(3), 549–560 (2011)
S. Jung, Y. Chang, K.-H. Bang, H.-G. Kim, Y.-H. Choi, S.-M. Hwang, K.H. Baik, High brightness nonpolar a-plane (11-20) GaN light-emitting diodes. Semicond. Sci. Technol. 27(2), 024017 (2012)
A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra, Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak. Appl. Phys. Lett. 85(22), 5143–5145 (2004)
A. Chakraborty, T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S.P. Denbaars, S. Nakamura, U.K. Mishra, Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates. Jpn. J. Appl. Phys. 44, L945–L947 (2005)
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki, Fabrication and properties of semi-polar \((1\overline{1}01)\) and \((11\overline{2}2)\) InGaN/GaN light emitting diodes on patterned Si substrates. Phys. Status Solidi (c) 5(6), 2234–2237 (2008)
M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, T. Mukai, Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar \(11\overline{2}2\) GaN bulk substrates. Jpn. J. Appl. Phys. 45(26), L659–L662 (2006)
H. Sato, A. Tyagi, H. Zhong, N. Fellows, R.B. Chung, M. Saito, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura, High power and high efficiency green light emitting diode on free-standing semipolar (\(11\overline{2}2\)) bulk GaN substrate. Phys. Status Solidi (RRL)—Rapid Res. Lett. 1(4), 162–164 (2007)
H. Sato, R.B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura, Optical properties of yellow light-emitting diodes grown on semipolar \((11\overline{2}2)\) bulk GaN substrates. Appl. Phys. Lett. 92(22), 221110 (2008)
Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S.P. DenBaars, S. Nakamura, 30-mw-class high-power and high-efficiency blue semipolar (\(10\overline{11}\)) InGaN/GaN light-emitting diodes obtained by backside roughening technique. Appl. Phys. Express 3(10), 102101 (2010)
H. Zhong, A. Tyagi, N.N. Fellows, F. Wu, R.B. Chung, M. Saito, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura, High power and high efficiency blue light emitting diode on freestanding semipolar (\(10\overline{11}\)) bulk GaN substrate. Appl. Phys. Lett. 90(23), 233504 (2007)
S. Yamamoto, Y. Zhao, C.-C. Pan, R.B. Chung, K. Fujito, J. Sonoda, S.P. DenBaars, S. Nakamura, High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (\(20\overline{2}1\)) GaN substrates. Appl. Phys. Express 3(12), 122102 (2010)
K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, H. Takasu, Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane gan single crystals. Jpn. J. Appl. Phys. 45(45), L1197–L1199 (2006)
A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. Denbaars, S. Nakamura, U.K. Mishra, Demonstration of nonpolar \(m\)-plane InGaN/GaN light-emitting diodes on free-standing \(m\)-plane GaN substrates. Jpn. J. Appl. Phys. 44(5), L173–L175 (2005)
A. Chakraborty, B.A. Haskell, H. Masui, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra, Nonpolar \(m\)-plane blue-light-emitting diode lamps with output power of \(23.5\,{\rm{mW}}\) under pulsed operation. Jpn. J. Appl. Phys. 45(2A), 739–741 (2006)
K.-C. Kim, M.C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J.S. Speck, S. Nakamura, S.P. DenBaars, Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs. Phys. Status Solidi (RRL)—Rapid Res. Lett. 1(3), 125–127 (2007)
Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, T. Nakamura, Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar \(\{20\overline{2}1\}\) GaN substrates. Appl. Phys. Express 2(9), 092101 (2009)
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, 531 nm green lasing of InGaN based laser diodes on semi-polar \(\{20\overline{2}1\}\) free-standing GaN substrates. Appl. Phys. Express 2, 082101 (2009)
T. Yamashita, T. Akiyama, K. Nakamura, T. Ito, Surface reconstructions on GaN and InN semipolar \((20\overline{2}1)\) surfaces. Jpn. J. Appl. Phys. 49, 018001 (2010)
Y.S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Kyono, M. Ueno, T. Nakamura, Optical gain spectroscopy of a semipolar \((20\overline{2}1)\)-oriented green InGaN laser diode. Appl. Phys. Express 4, 052103 (2011)
Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J.S. Speck, S.P. DenBaars, S. Nakamura, High-power blue-violet semipolar \((20\overline{21})\) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm\(^2\). Appl. Phys. Express 4, 082104 (2011)
Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C.G. Van de Walle, S.P. DenBaars, S. Nakamura, Influence of polarity on carrier transport in semipolar \((20\overline{2}1)\) and \((20\overline{21})\) multiple-quantum-well light-emitting diodes. Appl. Phys. Lett. 100(23), 231110 (2012)
Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. Shan, Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C G. Van de Walle, J.S. Speck, S.P. DenBaars, S. Nakamura, D. Feezell, Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells. Appl. Phys. Lett. 100(20), 201108 (2012)
P.S. Hsu, K.M. Kelchner, A. Tyagi, R.M. Farrell, D.A. Haeger, K. Fujito, H. Ohta, S.P. DenBaars, J.S. Speck, S. Nakamura, InGaN/GaN blue laser diode grown on semipolar \((30\overline{3}1)\) free-standing GaN substrates. Appl. Phys. Express 3(5), 052702 (2010)
D. Morita, M. Yamamoto, K. Akaishi, K. Matoba, K. Yasutomo, Y. Kasai, M. Sano, S. Ichi, Nagahama, T. Mukai, Watt-class high-output-power 365 nm ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 43(9A), 5945–5950 (2004)
Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, T. Mukai, White light emitting diodes with super-high luminous efficacy. J. Phys. D: Appl. Phys. 43(35), 354002 (2010)
T. Mukai, M. Yamada, S. Nakamura, Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn. J. Appl. Phys. 38(Part 1, No. 7A), 3976–3981 (1999)
Y. Narakawa, Nichia Corporation, Recent developments of high efficiency white light emitting diodes. Presentation at the ICNS-7, Las Vegas, USA (2007)
Nichia Corporation Oral presentation at the ICNS-8, Jeju, Korea (2009)
W. Goetz, Philips-Lumileds Lighting, High power III-nitride based light emitting diodes: progress and challenges. Presentation at the ICNS-7, Las Vegas, USA (2007)
W. Goetz, Philips-Lumileds Lighting Presentation at the rump session on the “Future of Solid State Lighting” at the ICNS-8, Jeju, Korea (2009)
Nichia Corporartion, 2012 Nichia LED Catalogue. Website (2012), http://www.nichia.co.jp
Soraa, Soraa premium MR 16 LED lamp, product# MR16-50-B01-12-830-25. Website (2012), http://www.soraa.com
Acknowledgements
This work was partially supported by the Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center (SFB 787) “Semiconductor Nanophotonics” and the Research Group (FOR 957) “PolarCon.”
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Kneissl, M., Raß, J., Schade, L., Schwarz, U.T. (2017). Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_5
Download citation
DOI: https://doi.org/10.1007/978-981-10-3755-9_5
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-3754-2
Online ISBN: 978-981-10-3755-9
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)