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LEDs Based on Heteroepitaxial GaN on Si Substrates

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III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 133))

Abstract

Recently, LEDs based on heteroepitaxial GaN on Si substrates (GaN/Si) are attracting a great attention and are industrially developed by many companies in order to compete with LEDs based on GaN/sappire and GaN/SiC which are commercially marketed advancing GaN/Si LEDs, though GaN/Si LEDs have been realized early in 2002. The recent attention on GaN/Si is due the availability of low cost and large wafer size availability (up to 300 mm diameter) of Si substrates. In this article, we review the development of the GaN epitaxial growth on Si and summarize the development made in our laboratory including the device structures achieving the GaN/Si LEDs with higher emission efficiency. We describe on GaN/Si using (i) high-temperature (HT) AlN/AlGaN intermediate layers, (ii) HT intermediate layers (ILs) and multilayers (MLs), and (iii) strained-layer superlattices (SLS) interlayers and their LED performances, respectively. We believe that GaN/Si LEDs with low prices will become important LEDs for general lighting in the near future.

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Acknowledgements

This work was partially supported by a Special Coordination Funds for Promoting Science and Technology.

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  1. Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555, Japan

    Takashi Egawa & Osamu Oda

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  1. Takashi Egawa
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Correspondence to Takashi Egawa .

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  1. Department of Materials Science and Engineering, Korea University, Seoul, Korea (Republic of)

    Tae-Yeon Seong

  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut, USA

    Jung Han

  3. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan

    Hiroshi Amano

  4. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, USA

    Hadis Morkoç

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Egawa, T., Oda, O. (2017). LEDs Based on Heteroepitaxial GaN on Si Substrates. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_3

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