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Light Extraction of High-Efficient Light-Emitting Diodes

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III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 133))

Abstract

This chapter deals with methods for fabricating high-efficient light-emitting diodes (LEDs) with higher light extraction efficiency (LEE). Some LED prototypes are then reviewed to investigate how their performance was enhanced by utilizing a variety of chip processes. The most efficient devices were found to be produced with unique fabrication processes, having at least one patterned sapphire substrate, chip shaping, vertical configuration, and/or flip-chip packaging, among others.

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Authors and Affiliations

  1. Korea Photonics Technology Institute, Gwangju, Republic of Korea

    Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh, Hyung Jo Park, Sang-Mook Kim & Jong Hyeob Baek

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  1. Ja-Yeon Kim
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  2. Tak Jeong
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  3. Sang Hern Lee
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  4. Hwa Sub Oh
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  5. Hyung Jo Park
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  7. Jong Hyeob Baek
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Correspondence to Jong Hyeob Baek .

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Editors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Seoul, Korea (Republic of)

    Tae-Yeon Seong

  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut, USA

    Jung Han

  3. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan

    Hiroshi Amano

  4. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, USA

    Hadis Morkoç

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Kim, JY. et al. (2017). Light Extraction of High-Efficient Light-Emitting Diodes. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_12

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