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AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

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III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 133))

Abstract

222–351 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demonstrated, which have been achieved by the development of crystal growth techniques for wide-bandgap AlN and AlGaN. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN quantum well (QW) emissions by introducing low-threading-dislocation density (TDD) AlN grown by an NH3 pulsed-flow multilayer growth method. Electron Injection efficiency (EIE) of the DUV LED was significantly increased by introducing multi-quantum barrier (MQB). Light extraction efficiency (LEE) was also improved by using a transparent p-AlGaN contact layer. The maximum external quantum efficiency (EQE) was increased up to 10.8% for a 276 nm DUV LED.

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Author information

Authors and Affiliations

  1. RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

    Hideki Hirayama

  2. Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama, 338-8570, Japan

    Norihiko Kamata

  3. Panasonic, 1048, Kadoma, Oaska, 571-8686, Japan

    Kenji Tsubaki

Authors
  1. Hideki Hirayama
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  2. Norihiko Kamata
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  3. Kenji Tsubaki
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Corresponding author

Correspondence to Hideki Hirayama .

Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Seoul, Korea (Republic of)

    Tae-Yeon Seong

  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut, USA

    Jung Han

  3. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan

    Hiroshi Amano

  4. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, USA

    Hadis Morkoç

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© 2017 Springer Nature Singapore Pte Ltd.

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Hirayama, H., Kamata, N., Tsubaki, K. (2017). AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_10

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