Abstract
This paper presents a novel sense amplifier for Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), named Separated Pre-discharging Sense Amplifier (SPDSA). By inverting the pre-charging path of Separated Pre-charging Sense Amplifier (SPCSA) to a pre-discharging path, a couple of inverters that used to transfer the voltage can be eliminated, and thus the area overhead of SPCSA is reduced. We develop a compact magnetoresistance model for MTJ to perform hybrid CMOS/magnetic HSPICE simulations. Based on 45 nm CMOS technology, simulation results exhibit that compared with SPCSA, SPDSA can reduce the power consumption by 35.6% and improve the read reliability by 29%.
This work is supported by the Research and Development of Supercomputer Processors (2015ZX01028-101).
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Li, H., Zhao, Z., Deng, Q., Li, P., Tang, H., Qu, L. (2016). A Novel Separated Pre-discharging Sense Amplifier for STT-MRAM. In: Xu, W., Xiao, L., Li, J., Zhang, C., Zhu, Z. (eds) Computer Engineering and Technology. NCCET 2016. Communications in Computer and Information Science, vol 666. Springer, Singapore. https://doi.org/10.1007/978-981-10-3159-5_20
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DOI: https://doi.org/10.1007/978-981-10-3159-5_20
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