Abstract
In 1965, Gordon Moore proposed the rule that the number of devices on the wafer would be doubled every 18–24 months. This “Moore’s law” describes the continuous and rapid trend of scaling. Every reduction of feature size will be called a technology generation or technology node. The technology nodes include 0.18, 0.13, 90, 65, and 45 μm.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
C.C. Hu, in Modern Semiconductor Devices for Integrated Circuits (PEARSON, 2010)
C.H. Jan, U. Bhattacharya, R. Brain, S.-J. Choi, G. Curello, G. Gupta, W. Hafez, M. Jang, M. Kang, K. Komeyli, T. Leo, N. Nidhi, L. Pan, J. Park, K. Phoa, A. Rahman, C. Staus, H. Tashiro, C. Tsai, P. Vandervoorn, L. Yang, J.-Y. Yeh, P. Bai, A 22 nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications. Tech. Digest IEDM 3.1.1 (2012)
S. Sinha, B. Cline, G. Yeric, V. Chandra, Y. Cao, Design benchmarking to 7 nm with FinFET predictive technology models. ISLPED 15 (2012)
M. Bohr, Opening New Horizons: 14 nm Process Technology (Intel IDF, 2014)
J.P. Colinge, in FinFETs and Other Multi-Gate Transistors (Springer, 2007)
N. Waldron, C. Merckling, W. Guo, P. Ong, L. Teugels, S. Ansar, D. Tsvetanova, F. Sebaai, D.H. van Dorp, A. Milenin, D. Lin, L. Nyns, J. Mitard, A. Pourghaderi, B. Douhard, O. Richard, H. Bender, G. Boccardi, M. Caymax, M. Heyns, W. Vandervorst, K. Barla, N. Collaert, A.V.Y. Thean, An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300 mm Si substrates. VLSI Tech. Symp. 1 (2014)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2018 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Wu, YC., Jhan, YR. (2018). 3D FinFET with L g = 15 nm and L g = 10 nm Simulation. In: 3D TCAD Simulation for CMOS Nanoeletronic Devices. Springer, Singapore. https://doi.org/10.1007/978-981-10-3066-6_3
Download citation
DOI: https://doi.org/10.1007/978-981-10-3066-6_3
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-3065-9
Online ISBN: 978-981-10-3066-6
eBook Packages: EngineeringEngineering (R0)