Abstract
Over the past three decades, several memory technologies have made their place in the market with varying degrees of commercial success, such as erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), static random-access memory (SRAM), dynamic RAM (DRAM), and NAND/NOR flash memories, with varying degrees of commercial success. In general, computer systems employ a memory hierarchy using different types of memories used at different levels. At the highest level, on-chip high speed cache static-RAMs (SRAMs) are used; whereas, at the next higher level, high density, low power off-chip DRAMs are used as a main memory.
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Kaushik, B.K., Verma, S., Kulkarni, A.A., Prajapati, S. (2017). Multilevel Cell MRAMs. In: Next Generation Spin Torque Memories. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-10-2720-8_4
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DOI: https://doi.org/10.1007/978-981-10-2720-8_4
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