Spin Orbit Torque MRAM

  • Brajesh Kumar KaushikEmail author
  • Shivam Verma
  • Anant Aravind Kulkarni
  • Sanjay Prajapati
Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)


The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alternate solution of the contemporary memory technologies.


Heavy Metal Spin Current Read Operation Ferromagnetic Layer Free Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© The Author(s) 2017

Authors and Affiliations

  • Brajesh Kumar Kaushik
    • 1
    Email author
  • Shivam Verma
    • 1
  • Anant Aravind Kulkarni
    • 1
  • Sanjay Prajapati
    • 1
  1. 1.Department of Electronics and Communication EngineeringIndian Institute of Technology RoorkeeRoorkeeIndia

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