Advertisement

Spin Orbit Torque MRAM

  • Brajesh Kumar KaushikEmail author
  • Shivam Verma
  • Anant Aravind Kulkarni
  • Sanjay Prajapati
Chapter
  • 1.1k Downloads
Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)

Abstract

The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alternate solution of the contemporary memory technologies.

Keywords

Heavy Metal Spin Current Read Operation Ferromagnetic Layer Free Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    K. L. Wang, J. G. Alzate, and P. K. Amiri, “Low-power non-volatile spintronic memory: STT-RAM and beyond,” J. Phys. D, Appl. Phys., vol. 46, no. 7, p. 074003, 2013.Google Scholar
  2. 2.
  3. 3.
    H. Yu, Y. Wang. Design exploration of emerging nano-scale non-volatile memory. Springer, 2015, ch. 1.Google Scholar
  4. 4.
    Y. Huai, “Spin-transfer torque MRAM (STT-MRAM): challenges and prospects,” AAPPS Bulletin, vol. 18, no. 6, pp. 33–40, 2008.Google Scholar
  5. 5.
    S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, “A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction,” Nat. Mat., vol. 9, pp. 721–724, Jul. 2010.Google Scholar
  6. 6.
    R. Bishnoi, M. Ebrahimi, F. Oboril, and M. B. Tahoori, “Architectural aspects in design and analysis of SOT-based memories,” IEEE Proc. Asia South Pac. Des. Autom. Conf. ASP-DAC, Singapore, pp. 700–707, 2014.Google Scholar
  7. 7.
    Y. Kim, S. Member, X. Fong, K. Kwon, M. Chen, and K. Roy, “Multilevel spin-orbit torque MRAMs,” IEEE Trans. on Elect. Dev., vol. 62, no. 2, pp. 561–568, 2015.Google Scholar
  8. 8.
    F. Oboril, R. Bishnoi, M. Ebrahimi, M. Tahoori, G. Di Pendina, K. Jabeur, and G. Prenat, “Spin orbit torque memory for non-volatile microprocessor caches,”, Proc. 1st Int. Work. Emer. Mem. Sol. Conf. DATE, Dresden, pp. 1–4, 2016.Google Scholar
  9. 9.
    S. Manipatruni, D. E. Nikonov, and I. A. Young, “Voltage and energy-delay performance of giant spin hall effect switching for magnetic memory and logic,” Arxiv, vol. 103001, pp. 1–16, 2013.Google Scholar
  10. 10.
    G. Prenat, K. Jabeur, P. Vanhauwaert, G. Di Pendina, F. Oboril, R. Bishnoi, M. Ebrahimi, N. Lamard, O. Boulle, K. Garello, J. Langer, B. Ocker, M. C. Cyrille, P. Gambardella, M. Tahoori, and G. Gaudin, “Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing,” IEEE Trans. Mul. Compu. Sys., vol. 2, no. 1, pp. 49–60, 2016.Google Scholar
  11. 11.
    R. Bishnoi, F. Oboril, and M. B. Tahoori, “Low-power multi-port memory architecture based on spin orbit torque magnetic devices,” Proc. 26th Ed. Gt. Lakes Symp. VLSI, pp. 409–414, 2016.Google Scholar
  12. 12.
    K. Jabeur, G. Di Pendina, G. Prenat, L. Buda-Prejbeanu, and B. Dieny, “Compact modeling of a magnetic tunnel junction based on spin orbit torque,” IEEE Trans. on Magn., vol. 50, no. 99, p. 1, 2014.Google Scholar
  13. 13.
    G. D. Panagopoulos, C. Augustine, and K. Roy, “Physics-based SPICE-compatible compact model for simulating hybrid MTJ/CMOS circuits,” IEEE Trans. on Elect. Dev., vol. 60, no. 9, pp. 2808–2814, 2013.Google Scholar
  14. 14.
    X. Fong, Y. Kim, K. Yogendra, D. Fan, A. Sengupta, A. Raghunathan, and K. Roy, “Spin-transfer torque devices for logic and memory: Prospects and perspectives,” IEEE Trans. Compu. Des. Inte. Cir. Sys., vol. 35, no. 1, pp. 1–22, 2016.Google Scholar

Copyright information

© The Author(s) 2017

Authors and Affiliations

  • Brajesh Kumar Kaushik
    • 1
    Email author
  • Shivam Verma
    • 1
  • Anant Aravind Kulkarni
    • 1
  • Sanjay Prajapati
    • 1
  1. 1.Department of Electronics and Communication EngineeringIndian Institute of Technology RoorkeeRoorkeeIndia

Personalised recommendations