Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories

  • Brajesh Kumar Kaushik
  • Shivam Verma
  • Anant Aravind Kulkarni
  • Sanjay Prajapati
Chapter
Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)

Abstract

Spin transfer torque magneto-resistive random access memories (STT MRAMs) are non-volatile memories that potentially demonstrate high speed and integration density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applications.

Keywords

Resistive Random Access Memory Magnetic Tunnel Junction Switching Threshold Subthreshold Slope Perpendicular Magnetic Anisotropy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© The Author(s) 2017

Authors and Affiliations

  • Brajesh Kumar Kaushik
    • 1
  • Shivam Verma
    • 1
  • Anant Aravind Kulkarni
    • 1
  • Sanjay Prajapati
    • 1
  1. 1.Department of Electronics and Communication EngineeringIndian Institute of Technology RoorkeeRoorkeeIndia

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