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Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories

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Next Generation Spin Torque Memories

Part of the book series: SpringerBriefs in Applied Sciences and Technology ((BRIEFSAPPLSCIENCES))

Abstract

Spin transfer torque magneto-resistive random access memories (STT MRAMs) are non-volatile memories that potentially demonstrate high speed and integration density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applications.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India

    Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni & Sanjay Prajapati

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  1. Brajesh Kumar Kaushik
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  2. Shivam Verma
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  3. Anant Aravind Kulkarni
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  4. Sanjay Prajapati
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Correspondence to Brajesh Kumar Kaushik .

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Kaushik, B.K., Verma, S., Kulkarni, A.A., Prajapati, S. (2017). Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories. In: Next Generation Spin Torque Memories. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-10-2720-8_2

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  • DOI: https://doi.org/10.1007/978-981-10-2720-8_2

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