Abstract
The limitation with the existing testing techniques is, if the test does not consider all the aspects of SRAM parameters, including parasitic memory effect, then it will result as an incomplete test. This paper presents a new parasitic extraction testing method for embedded SRAMs, employing defect-induced layout. The defect injection in a circuit is due to an open/short between wires, or missing contacts etc. In this work, only node-to-node short defects are considered. Our test results proved that using parasitic extraction method existing faults as well as undefined faults could be detected. The existing faults identified are Stuck At Fault, (SAF), Undefined Read Fault (URF), Read Destructive Fault (RDF), Undefined Write Fault (UWF), Random Read Fault (RRF), Incorrect Read Fault (IRF), and No Access Fault (NAF). The undefined faults identified are Bit-Line Delay Fault (BDF), Initialization Order Fault (IOF), Un Stabilized Write Fault (USWF), Un Stabilized Read Fault (USRF), and Write Before Access Fault (WBAF). In addition, the complete fault model dictionary is also an outcome of this work.
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Parvathi, M., Prasad, K.S., Vasantha, N. (2017). Testing of Embedded SRAMs Using Parasitic Extraction Method. In: Ibrahim, H., Iqbal, S., Teoh, S., Mustaffa, M. (eds) 9th International Conference on Robotic, Vision, Signal Processing and Power Applications. Lecture Notes in Electrical Engineering, vol 398. Springer, Singapore. https://doi.org/10.1007/978-981-10-1721-6_6
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DOI: https://doi.org/10.1007/978-981-10-1721-6_6
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