Abstract
Motivation behind this paper is to bring new method for multi-feature compact designs with low power requirement which is beyond the capacity of binary logic as well as use of only CMOS technology. Simplicity, compactness, and low power requirement can be achieved by hybridization of single electron transistor and CMOS with quaternary logic. The proposed implementation overcomes several limitations found in the previous quaternary implementation such as MIN, MAX, XOR gate and Full Adder which is simulated in 120 nm technology requires less number of transistors as well as with very low power dissipation.
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Raut Vaishali, Dakhole, P.K. (2017). Design and Simulation of Hybrid SETMOS Operator Using Multiple Value Logic at 120 nm Technology. In: Satapathy, S., Bhateja, V., Joshi, A. (eds) Proceedings of the International Conference on Data Engineering and Communication Technology. Advances in Intelligent Systems and Computing, vol 469. Springer, Singapore. https://doi.org/10.1007/978-981-10-1678-3_30
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DOI: https://doi.org/10.1007/978-981-10-1678-3_30
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