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Power Amplifier Design for Variability

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CMOS RF Circuit Design for Reliability and Variability

Part of the book series: SpringerBriefs in Applied Sciences and Technology ((SBR))

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Abstract

This chapter discusses the process variation effect on power amplifier performance. Extensive analytical equations are derived. The adaptive body bias technique to reduce the process variation effect on the power amplifier performance variation is presented.

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References

  1. Liu Y, Yuan JS (2011) CMOS RF power amplifier variability and reliability resilience biasing design and analysis. IEEE Trans Electron Devices 540–546

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  2. Pappu AM, Zhang X, Harrison AV, Apsel AB (2007) Process invariant current source design: Methodology and examples. IEEE J Solid-State Circuits 2293–2302

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  3. Yuan JS, Kritchanchai E (2013) Power amplifier resilient design for process, voltage, and temperature variations. In: Microelectronics reliability, pp 856–860

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  4. Quemerais T, Moquillon L, Huard V, Fournier J-M, Benech P, Corrao N, Mescot X (2010) Hot-carrier stress effect on a CMOS 65-nm 60-GHz one-stage power amplifier. IEEE Electron Device Lett 927–929

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Correspondence to Jiann-Shiun Yuan .

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Yuan, JS. (2016). Power Amplifier Design for Variability. In: CMOS RF Circuit Design for Reliability and Variability. SpringerBriefs in Applied Sciences and Technology(). Springer, Singapore. https://doi.org/10.1007/978-981-10-0884-9_8

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  • DOI: https://doi.org/10.1007/978-981-10-0884-9_8

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-0882-5

  • Online ISBN: 978-981-10-0884-9

  • eBook Packages: EngineeringEngineering (R0)

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