Abstract
This chapter talks about the LC oscillator reliability subjected to electrical stress. Mixed-mode device and circuit simulation results as well as experimental data of voltage-controlled LC oscillators are presented.
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References
Ng WL, Luong HC (2007) A 1-V 17-GHz 5-mW CMOS quadrature VCO based on transformer coupling. IEEE J Solid State Circ 42:1933–1941
Huang T-H, Tseng Y-R (2008) A 1 V 2.2 mW 7 GHz CMOS quadrature VCO using current-reuse and cross-coupled transformer-feedback technology. IEEE Microwave Wireless Compon Lett 18:698–700
Chuang YH, Lee S-H, Yen R-H, Jang S-L, Lee J-F, Juang M-H (2006) A wide locking range and low voltage CMOS direct injection-locked frequency divider. IEEE Microwave Wireless Compon Lett 16:299–301
Lee S-H, Jang S-L, Chuang Y-H, Chao J-J, Lee J-F, Jung M-H (2007) A low power injection locked LC-tank oscillator with current reused topology. IEEE Microwave Wireless Compon Lett 17:220–222
Oh N-J, Lee S-G (2005) Current reused LC VCOs. IEEE Microwave Wireless Compon Lett 15:736–738
Yun S-Y, Shin S-B, Choi H-C, Lee S-G (2005) A 1 mW current-reuse CMOS differential LC-VCO with low phase noise. IEEE Int Solid State Circ Conf 540–541
Chuang Y-H, Jang S-L, Lee S-H, Yen R-H, Jhao J-J (2007) 5-GHz low power current-reused balanced CMOS differential Armstrong VCOs. IEEE Microwave Wireless Compon Lett 17:139–141, 299–301
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Ling CH, Ang DS, Tan SE (1995) Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFETs. IEEE Electron Devices 5:1528–1535
Jin Z, Cressler JD, Abadeer W (2004) Hot-carrier stress induced low-frequency noise degradation in 0.13 µm and 0.18 µm RF CMOS technologies. In: International reliability physics symposium, pp 440–444
Brederlow R, Weberm W, Scgnjutt-Landsiedel D, Thewes R (2002) Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions. IEEE Trans Electron Devices 49:1588–1596
Kolhatkar J, Hoekstra E, Hof A, Salm C, Schmitz J, Wallinga H (2005) Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation. IEEE Electron Devices Lett 26:764–766
Reddy V, Barton N, Martin S, Hung CM, Krishnan A, Chancellor C, Sundar S, Tsao A, Corum D, Yanduru N, Madhavi S, Akhtar S, Pathak N, Srinivasan P, Shichijo S, Benaissa K, Roy A, Chatterjee T, Taylor R, Krick J, Brighton J, Ondrusek J, Barry D, Krishnan S (2009) Impact of transistor reliability on RF oscillator phase noise degradation. In: Proceedings international Electron Devices Meeting, pp 401–404
Yun S-Y, Shin S-B, Choi H-C, Lee S-G (2005) A 1 mW current-reuse CMOS differential LC-VCO with low phase noise. IEEE Int Solid State Circ Conf 540–541
Liu S-L, Chen K-H, Chang T, Chin A (2010) A low-power K-band CMOS VCO with four-coil transformer feedback. IEEE Microwave Wireless Compon Lett 20:459–461
Yen HD, Yuan JS, Wang RL, Huang GW, Yeh WK, Huang FS (2012) RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments. Microelectron Reliab 52:2655–2659
Yu C, Yuan JS (2005) MOS RF reliability subject to dynamic voltage stress—modeling and analysis. IEEE Trans Electron Devices 52:1751–1758
Ling CH, Ang DS, Tan SE (1995) Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFETs. IEEE Electron Devices 42:1528–1535
Luo Z, Walko JP (2005) Physical mechanism of NBTI relaxation by RF and noise performance of RF CMOS devices. In: International reliability physics symposium, pp 712–713
Kaczer B, Grasser T, Martin-Martinez J, Aoulaiche SM, Roussel PJ, Groseneken G (2009) NBTI from the perspective of defect states with widely distributed time scales. In: International reliability physics symposium, pp 55–60
Jang S-L, Sanjeev J, Huang J-F (2013) Experimental RF characteristics of hot-carrier-stressed p-core dual-band VCO. J Low Power Electron 9:247–252
Hu C, Tam SC, Hsu F-C, Ko P-K, Chan T-Y, Terrill KW (1985) Hot electron induced MOSFET degradation—model, monitor and improvement. IEEE J Solid State Circ 32:295–305
Mistry KR, Doyle B (1993) AC versus DC hot-carrier degradation in n-channel MOSFETs. IEEE Trans. Electron Devices 40:96–104
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Yuan, JS. (2016). Voltage-Controlled Oscillator Reliability. In: CMOS RF Circuit Design for Reliability and Variability. SpringerBriefs in Applied Sciences and Technology(). Springer, Singapore. https://doi.org/10.1007/978-981-10-0884-9_5
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DOI: https://doi.org/10.1007/978-981-10-0884-9_5
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