Abstract
In contrast to conventional 2-D MOSFETs, FinFETs are able to be scaled down to 20 nm and beyond, and have superior performance. There are two types of FinFETs:SOI FinFETs and bulk FinFETs. Bulk FinFETs are built on bulk-Si wafers, which have less defect density and are cheaper than SOI wafers, while also having better heat transfer rate to the substrate compared to SOI FinFETs. In 2011, Intel announced the world’s first 3-D transistors in the mass production of a 22 nm microprocessor (code-named Ivy Bridge). The 3-D transistors adopted by Intel are actually bulk FinFETs. In this chapter, we provide the design guidelines for bulk FinFETs at the 14 nm node, and compare bulk and SOI FinFETs in terms of scalability, parasitic capacitance, and heat dissipation. Decrease of the drain current by parasitic resistance in the source (S) and drain (D) regions is also addressed. Drain current fluctuation by single charge trap is studied in terms of the trap depth, trap position, and percolation path. In the design of 14 nm bulk FinFETs, a punch-through stopper at a position just under the S/D junction depth is required to suppress unwanted cross-talk between S and D. The peak concentration of the stopper needs to be 2–3 × 1018 cm−3. The S/D junction depth should be equal or slightly smaller than the height of fin body, defined from the surface of the isolation oxide region to the top of the fin body. Considering the short channel effect and drain current drivability, the reasonable doping concentration of uniformly doped fin body is 2–3 × 1017 cm−3. To keep the drain-induced barrier below 100 mV/V when the length between the S and D junctions is the same as the gate length (14 nm), the width of the fin body should be ~9 nm. Under the same doping concentration and geometry, both 14 nm SOI and bulk FinFETs have nearly the same I–V characteristics, which mean nearly the same scalability. Since thin fin bodies protruding from the substrate are easily depleted, the junction capacitance of the S/D to fin body can be reduced to similar or even lower values than that of SOI FinFETs. To achieve a similar heat transfer rate to the substrate as bulk FinFETs, the buried oxide in SOI FinFETs should be thinned down to 20 nm or beyond, which could cause unwanted increase in the parasitic capacitance. The contact area between the metal electrode and the S/D region should be as wide as possible to reduce the S/D parasitic resistance.
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Lilienfeld JE (1930) Method and apparatus for controlling electric currents. U.S. Patent 1,745,175 (filed in 1926, issued in 1930)
Kahng D, Atalla MM (1960) Silicon-silicon dioxide field induced surface devices. Paper presented at the IRE solid-state devices research conference, Pittsburgh, PA, June 1960
Deal BE (1969) Method of making stable semiconductor devices. U.S. Patent no. 3,426,422, 11 Feb 1969
Semiconductor Industry Association (SIA) (2013) International technology roadmap for semiconductors, 2013 edn
Kedzierski J, Xuan P, Subramanian V, Anderson E, Bokor J, King T-J, Hu C (2000) A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain. Superlattices Microstruct 28(5):445–452
Low T, Li FF, Shen C, Yeo Y-C, Hou YT, Zhu C, Chin A, Kwong DL (2004) Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semiconductor field-effect transistors. Appl Phys Lett 85(12):2402–2404
Choi Y-K, Lindert N, Xuan P, Tang S, Ha D, Anderson E, King T-J, Bokor J, Hu C (2001) Sub-20 nm CMOS FinFET technologies. In: IEDM technical digest, pp 421–424
Park Tai-su, Yoon Euijoon, Lee Jong-Ho (2003) A 40 nm body-tied FinFET (OMEGA MOSFET) using bulk Si wafer. IEE Phys E 19(1):6–12
Doyle B, Boyanov B, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Rios R, Chau R (2003) Tri-gate fully-depleted CMOS transistors: fabrication, design, and layout. In: Technical digest of symposium on VLSI technology, pp 133–134
Wann CH, Noda K, Tanaka T, Yoshida M, Hu C (1996) A comparative study of advanced MOSFET concepts. IEEE Trans Electron Devices 43:1742–1753
Wong H-SP, Chan KK, Taur Y (1997) Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel. In: IEDM technical digest, pp 427–430
Ferain I, Colinge CA, Colinge J-P (2011) Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transitors. Nature 479:310–316
Leobandung E, Jian G, Guo L, Chou SY (1997) Wire-channel and wrap-around-gate metal-oxide-semiconductor field-effect transistors with a significant reduction of short channel effects. J Vac Sci Technol B 15(6):2791–2794
Auth CP, Plummer JD (1997) Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET’s. IEEE Electron Device Lett 18(2):74–77
Kedzierski J, Nowak E, Kanarsky T, Zhang Y, Boyd D, Carruthers R, Cabral C, Amos R, Lavoie C, Roy R, Newbury J, Sullivan E, Benedict J, Saunders P, Wong K, Canaperi D, Krishnan M, Lee K-L, Rainey BA, Fried D, Cottrell P, Philip Wong H-S, Ieong M, Haensch W (2002) Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation. In: IEDM technical digest, pp 247–250
Yang F-L, Chen H-Y, Chen F-C, Huang C-C, Chang C-Y, Chiu H-K, Lee C-C, Chen C-C, Huang H-T, Chen C-J, Tao H-J, Yeo Y-C, Liang M-S, Hu C (2002) 25 nm CMOS omega FETs. In: IEDM technical digest, pp 255–258
Kedzierski J, Fried DM, Nowak EJ, Kanarsky T, Rankin JH, Hanafi H, Natzle W, Boyd D, Zhang Y, Roy RA, Newbury J, Yu C, Yang Q, Saunders P, Witlets CP, Johnson A, Cole SP, Young HE, Carpenter N, Rakowski D, Rainey BA, Cotrell PE, Ieong M, Wong H-HP (2001) High-performance symmetric-gate and CMOS-compatible Vt asymmetric-gate FinFET devices. In: IEDM technical digest, pp 437–440
Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stalele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L (2004) Nanoscale FinFETs for low power applications. Solid-State Electron 48(10-11):1819–1823
Shang H, Chang L, Wang X, Rooks M, Zhang Y, To B, Babich K, Totir G, Sun Y, Kiewra E, Ieong M, Haensch W (2006) Investigation of FinFET devices for 32 nm technologies and beyond. In: Symposium on VLSI technology digest, pp 66–67
von Arnim K, Augendre E, Pacha C, Schulz T, San KT, Bauer F, Nackaerts A, Rooyackers R, Vandeweyer T, Degroote B, Collaert N, Dixit A, Singanamalla R, Xiong W, Marshall A, Cleavelin CR, Schrufer K, Jurczak M (2007) A low-power multi-gate FET CMOS technology with 13.9 ps inverter delay, large-scale integrated high performance digital circuits and SRAM. In: Symposium on VLSI technology digest, pp 106–107
Okano K, Izumida T, Kawasaki H, Kaneko A, Yagishita A, Kanemura T, Kondo M, Ito S, Aoki N, Miyano K, Ono T, Yahashi K, Iwade K, Kubota T, Matsushita T, Mizushima I, Inaba S, Ishimaru K, Suguro K, Eguchi K, Tsunashima Y, Ishiuchi H (2005) Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length. In: IEDM technical digest, pp 721–724
Wambacq P, Verbruggen B, Scheir K, Borremans J, De Heyn V, Van der Plas G, Mercha A, Parvais B, Subramanian V, Jurczak M, Decoutere S, Donnay S (2006) Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET. In: Proceedings of European solid-state device research conference technical digest, pp 53–56
Raskin J-P, Chung TM, Kilchytska V, Lederer D, Flandre D (2006) Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization. IEEE Trans Electron Devices 53(5):1088–1095
Guo Z, Balasubramanian S, Zlatanovici R, King T-J, Nikolic B (2005) FinFET-based SRAM design. In: Proceedings of international symposium on low power electronics and design technical digest, pp 2–7
Kawauka H, Okano K, Kaneko A, Yagishita A, Izumida T, Kanemura T, Kasai K, Ishida T, Sasaki T, Takeyama Y, Aoki N, Ohtsuka N, Suguro K, Eguchi K, Tsunashima Y, Inaba S, Ishimaru K, Ishiuchi H (2006) Embedded bulk FinFET SRAM cell technology with planar FET peripheral circuit for hp 32 nm node and beyond. In: Symposium on VLSI technology digest, pp 86–87
Park T, Cho HJ, Chae JD, Han SY, Park D, Kim K, Yoon E, Lee JH (2006) Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs). IEEE Trans Electron Devices 53(3):481–487
Cho IH, Park T-S, Choi SY, Lee JD, Lee J-H (2003) Body-tied doube-gate SONOS flash (omega flash) memory device built on bulk Si wafer. In: Proceedings of device research conference technical digest, pp 133–134
Hsu T-H, Lue H-T, Lai E-K, Hsieh J-Y, Wang Z-Y, Yang L-W, King Y-C, Yang T, Chen K-C, Hsieh K-Y, Liu R, Lu C-Y (2007) A high-speed BE-SONOS NAND flash utilizing the field-enhancement effect of FinFET. In: IEDM technical digest, pp 913–916
Gerardi C, Lombardo S, Cina G, Tripiciano E, Corso D, Ancarani V, Iacono G, Bongiorno C, Garozzo C, Barbe P, Costa GA, Coccorese C, Vecchio M, Rimini E, Melanotte M (2007) Highly manufacturable/low aspect ratio Si nano floating gate FinFET memories: high speed performance and improved reliability. In: Proceedings of non-volatile semiconductor memory workshop technical digest, pp 44–45
Hwang J-R, Lee T-L, Ma H-C, Lee T-C, Chung T-H, Chang C-Y, Liu S-D, Perng B-C, Hsu J-W, Lee M-Y, Ting C-Y, Huang C-C, Wang J-H, Shieh J-H, Yang F-L (2005) 20 nm gate bulk-FinFET SONOS flash. In: IEDM technical digest, pp 154–157
Cho ES, Kim T-Y, Cho BK, Lee C-H, Lee JJ, Fayrushin A, Lee C, Park D, Ryu B-I (2006) Technology breakthrough of body-tied FinFET for sub 50 nm NOR flash memory. In: Symposium on VLSI technology digest, pp 110–111
Lee CH, Yoon JM, Lee C, Yang HM, Kim KN, Kim TY, Kang HS, Ahn YJ, Park D, Kim K (2004) Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60 nm technology and beyond. In: Symposium on VLSI technology digest, pp 130–131
Lee C, Yoon J-M, Lee C-H, Park JC, Kim TY, Kang HS, Sung SK, Cho ES, Cho HJ, Ahn YJ, Park D, Kim K, Ryu B-I (2004) Enhanced data retention of damascene-finFET DRAM with local channel implantation and < 100 > fin surface orientation engineering. In: IEDM technical digest, pp 61–64
Kim Y-S, Lee S-H, Shin S-H, Han S-H, Lee J-Y, Lee J-W, Han J, Yang S-C, Sung J-H, Lee E-C, Song B-Y, Chung D-J, Kim K, Lee W (2005) Local-damascene-FinFET DRAM integration with p+ doped poly-silicon gate technology for sub-60 nm device generations. In IEDM technical digest, pp 315–318
Lee D-H, Lee S-G, Yoo JR, Buh G-H, Yon GH, Shin D-W, Lee DK, Byun H-S, Jung IS, Park T-S, Shin YG, Choi S, Chung U-I, Moon J-T, Ryu B-I (2007) Improved cell performance for sub-50 nm DRAM with manufacturable bulk FinFET structure. In: Symposium on VLSI technology digest, pp 164–165
Eneman G, Hellings G, De Keersgieter A, Collaert N, Thean A (2013) Quantum-barriers and ground-plane isolation: A path for scaling bulk-FinFET technologies to the 7 nm-node and beyond. In: IEDM technical digest, Dec 2013, pp 320–323
Wu S-Y et al (2013) A 16 nm FinFET CMOS technology for mobile SoC and computing applications. In: IEDM technical digest, Dec 2013, pp 224–227
Gupta S, Moroz V, Smith L, Lu Q, Saraswat KC (2013) A group IV solution for 7 nm FinFET CMOS: Stress engineering using Si, Ge and Sn. In: IEDM technical digest, Dec 2013, pp 644–647
Guo W, Moroz V, Van der Plas G, Choi M, Redolfi A, Smith L, Eneman G, Van Huylenbroeck S, Su PD, Ivankovic A, De Wachter B, Debusschere I, Croes K, De Wolf I, Mercha A, Beyer G, Swinnen B, Beyne E (2013) Copper through silicon via induced deep out zone for 10 nm node bulk FinFET CMOS technology. In: IEDM technical digest, Dec 2013, pp 340–343
Kang CY, Sohn C, Baek R-H, Hobbs C, Kirsch P, Jammy R (2013) Effects of layout and process parameters on device/circuit performance and variability for 10 nm node FinFET technology. In: Symposium on VLSI technology digest, 2013, pp. 90–91
Maeda S, Ko Y, Jeong J, Fukutome H, Kim M, Choi J, Shin D, Oh Y, Lim W, Lee K (2013) 3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond. In: Symposium on VLSI technology digest, pp 88–89
Mitard J, Witters L, Loo R, Lee SH, Sun JW, Franco J, Ragnarsson L-A, Brand A, Lu X, Yoshida N, Eneman G, Brunco DP, Vorderwestner M, Storck P, Milenin AP, Hikavyy A, Waldron N, Favia P, Vanhaeren D, Vanderheyden A, Olivier R, Mertens H, Arimura H, Sonja S, Vrancken C, Bender H, Eyben P, Barla K, Lee S-G, Horiguchi N, Collaert N, Thean AV-Y (2014) 15 nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process. In: Symposium on VLSI technology digest, pp 138–139
Waldron N, Merckling C, Guo W, Ong P, Teugels L, Ansar S, Tsvetanova D, Sebaai F, van Dorp DH, Milenin A, Lin D, Nyns L, Mitard J, Pourghaderi A, Douhard B, Richard O, Bender H, Boccardi G, Caymax M, Heyns M, Vandervorst W, Barla K, Collaert N, Thean AV-Y (2014) An INGaAs/InP auantum well FinFet using the replacement Fin Process integrated in an RMG flow on 300 mm Si substrates. In: Symposium on VLSI technology digest, pp 32–33
Hashemi P, Kobayashi M, Majumdar A, Yang LA, Baraskar A, Balakrishnan K, Kim W, Chan K, Engelmann SU, Ott JA, Bedell SW, Murray CE, Liang S, Dennard RH, Sleight JW, Leobandung E, Park D-G (2013) High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled Fin and gate dimensions. In: Symposium on VLSI technology digest, pp 18–19
Seo K-I et al (2014) A 10 nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI. In: Symposium on VLSI technology digest, pp 14–15
Hashemi P, Balakrishnan K, Majumdar A, Khakifiroooz A, Kim W, Baraskar A, Yang LA, Chan K, Engelmann SU, Ott JA, Antoniadis DA, Leobandung E, Park D-G (2014) Strained Si1-xGex-on-Insulator PMOS FinFETs with excellent sub-threshold leakage, extremely high short-channel performance and source injection velocity for 10 nm node and beyond. In: Symposium on VLSI technology digest, pp 18–19
Matsukawa T, Fukuka K, Liu YX, Endo K, Tsukada J, Yamauchi H, Ishikawa Y, O’uchi S, Mizubayashi W, Migita S, Morita Y, Ota H, Masahara M (2014) Lowest variability SOI FinFETs having multiple Vt by back-biasing. In: Symposium on VLSI technology digest, pp 142–143
Colinge J-P (1991) Silicon-on-insulator technology: materials to VLSI. Kluwer Academic Publishers, Dordrecht
Lee J-H, Park T-S, Yoon E, Park JJ (2003) Simulation study of a new body-tied FinFETs (Omega MSOFETs) using bulk Si wafers. In: Proceedings of Si nanoelectronics technical digest, pp 102–103
Metz MV, Datta S, Docay ML, Kavalieros JT, Brask JK, Chau RS (2008) Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors, Intel, US 7,425,500
Fan M-L, Hu VP-H, Chen Y-N, Su P, Chuang CT (2012) Analysis of single-trap-induced random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuit. IEEE Trans Electron Devices 59(8):2227–2234
Asenov A (1998) Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET’s: A 3-D “atomistic” simulation study. IEEE Trans Electron Devices 45(12):2505–2513
Li Y, Hwang C-H, Li T-Y, Han M-H (2010) Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies. IEEE Trans Electron Devices 57(2):437–447
Burzo MG, Komarov PL, Raad PE (2003) Thermal transport properties of gold-covered thin-film silicon dioxide. IEEE Trans Compon Packag Technol 26(1):80–88
Glassbrenner CJ, Slack GA (1964) Thermal conductivity of silicon and germanium from 3 oK to the melting point. Phys Rev 134(4A):A1058–A1069
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This work was supported by the Center for Integrated Smart Sensors, funded by the Ministry of Science, ICT & Future Planning, as the Global Frontier Project.
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Lee, JH. (2016). Bulk FinFETs: Design at 14 nm Node and Key Characteristics. In: Kyung, CM. (eds) Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting. KAIST Research Series. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9990-4_2
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