Abstract
Fabrication of the wide bandgap GaN-based light emitting diodes (LEDs) and physical property are introduced in this section. Traditional planar GaN-based LEDs development is facing performance limit due to the low light-extraction efficiency and strain-induced quantum-confined Stark effect (QCSE) . The lattice mismatch in GaN-based LED epi-structure induces piezoelectric field . The piezoelectric field thus tilts the energy band structure and separates carriers in InGaN/GaN multiple quantum wells (MQWs), resulting in internal quantum efficiency (IQE) droop. To increase surface to volume ratio and strain relaxation, low dimensional structures such as nanorods and nanowires were developed. In Sect. 24.1, bottom-up and top-down approaches will be introduced. By using the Raman scattering measurement, strain in GaN-based epi-structure can be further verified. We show that nanorod structure can mitigate QCSE and improve the electron-hole overlapping ratio. We also indicate that longer nanorod structure has higher optical output, but trade-off has to be made as more defects are picked up during the etching process.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Abbreviations
- \( E_{2}^{H} \) :
-
Phonon mode of material
References
C.-C. Chen, C.-C. Yeh, Large-scale catalytic synthesis of crystalline gallium nitride nanowires. Adv. Mater. 12, 738–741 (2000)
P. Cheyssac, M. Sacilotti, G. Patriarche, Vapor-liquid-solid mechanisms: challenges for nanosized quantum cluster/dot/wire materials. J. Appl. Phys. 100, 044315 (2006)
Q. Wu, Z. Hu, X. Wang, Y. Lu, K. Huo, S. Deng, N. Xu, B. Shen, R. Zhang, Y. Chen, Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires. J. Mater. Chem. 8, 2024–2027 (2003)
C.C. Tang, S.S. Fan, M.L. Chapelle, P. Li, Silica-assisted catalytic growth of oxide and nitride nanowires. Chem. Phys. Lett. 333, 12–15 (2001)
Y.H. Kim, J.Y. Lee, S.-H. Lee, J.-E. Oh, H.S. Lee, Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy. Appl. Phys. A 80, 1635–1639 (2005)
L.W. Tu, C.L. Hsiao, T.W. Chi, I. Lo, K.Y. Hsieh, Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy. Appl. Phys. Lett. 82, 1601–1603 (2003)
S.Y. Kuo, C.C. Kei, C.N. Hsiao, C.K. Chao, Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy. J. Vac. Sci. Technol. B 24, 695–699 (2006)
P. Deb, H. Kim, V. Rawat, M. Oliver, S. Kim, M. Marshall, E. Stach, T. Sands, Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography. Nano Lett. 5, 1847–1851 (2005)
H.W. Huang, C.C. Kao, T.H. Hsueh, C.C. Yu, C.F. Lin, J.T. Chu, H.C. Kuo, S.C. Wang, Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching. Mater. Sci. Eng., B 113, 125–129 (2004)
M.Y. Hsieh, C.Y. Wang, L.Y. Chen, M.Y. Ke, J.J. Huang, InGaN–GaN nanorod light emitting arrays fabricated by silica nanomasks. IEEE J. Quantum Electron. 44 (2008)
Y.Y. Huang, L.Y. Chen, C.H. Chang, Y.H. Sun, Y.W. Cheng, M.Y. Ke, Y.H. Lu, H.C. Kuo, J.J. Huang, Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays. Nanotechnology 22(4), 045202-1–045202-6 (2011)
C.Y. Wang, L.Y. Chen, C.P. Chen, Y.W. Cheng, M.Y. Ke, M.Y. Hsieh, H.M. Wu, L.H. Peng, J.J. Huang, GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength. Opt. Express 14, 10556 (2008)
Y.J. Lee, S.Y. Lin, C.H. Chiu, T.C. Lu, H.C. Kuo, S.C. Wang, S. Chhajed, J.K. Kim, E.F. Schubert, High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays. Appl. Phys. Lett. 94, 141111 (2009)
C.H. Chiu, T.C. Lu, H.W. Huang, C.F. Lai, C.C. Kao, J.T. Chu, C.C. Yu, H.C. Kuo, S.C. Wang, C.F. Lin, T.H. Hsueh, Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands. Nanotechnology 18, 445201 (2007)
A. Kikuchi, M. Tada, K. Miwa, K. Kishino, Growth and characterization of InGaN/GaN nanocolumn LED. Proc. SPIE 6129, 612905 (2006)
L.Y. Chen, Y.Y. Huang, C.H. Chang, Y.H. Sun, Y.W. Cheng, M.Y. Ke, C.P. Chen, J.J. Huang, High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes. Opt. Express 18, 7664–7669 (2010)
C.T. Sah, R.N. Noyce, W. Shockley, Carrier generation and recombination in p-n junctions and p-n junction characteristics. Proc. IRE 45, 1228 (1957)
K. Mayes, A. Yasan, R. McClintock, D. Shiell, S.R. Darvish, P. Kung, M. Razeghi, High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well. Appl. Phys. Lett. 84, 1046 (2004)
J.M. Shah, Y.-L. Li, Th Gessmann, E.F. Schubert, Experimental analysis and theoretical model for anomalously high ideality factors (n ≫ 2.0) in AlGaN/GaN p-n junction diodes. J. Appl. Phys. 94, 2627 (2003)
D. Zhu, J. Xu, A.N. Noemaun, J.K. Kim, E.F. Schubert, M.H. Crawford, D.D. Koleske, The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 94, 081113 (2009)
P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger, T. Sands, GaN nanorod Schottky and p-n junction diodes. Nano Lett. 6, 2893–2898 (2006)
A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin, J. Melngailis, S.N. Mohammad, Fabrication of GaNbased nanoscale device structures utilizing focused ion beam induced Pt deposition. J. Appl. Phys. 100, 024306 (2006)
C.H. Chang, L.Y. Chen, L.C. Huang, Y.T. Wang, T.C. Lu, J.J. Huang, Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes. J. Quantum Electron. 48(4), 551–555 (2012)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Tan, JY., Chen, LY., Huang, JJ. (2015). Nanorod LED Arrays. In: Lee, CC. (eds) The Current Trends of Optics and Photonics. Topics in Applied Physics, vol 129. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9392-6_24
Download citation
DOI: https://doi.org/10.1007/978-94-017-9392-6_24
Published:
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-017-9391-9
Online ISBN: 978-94-017-9392-6
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)