Abstract
It is always good practice to verify the findings of a theoretical discussion by means of practical measurement results. Hence, the Pulsed Resonant Charge Extractor (PSCE) circuit derived in the previous chapter has been implemented on transistor level in a \(0.35~\mu \mathrm{m}\) technology. In the past years, this technology has well established in the field of energy harvesting, and the fabricated chips have shown a good performance. For the circuit design process, the electrical equivalent circuits of the piezoelectric harvester as derived before haven been used. One of the main goals was to reduce the average power consumption within the circuits into a regime where it can be neglected compared to the power converted by the mechanical energy harvester. One general strategy to achieve this goal is to aggressively scale down power consumption in the blocks which have to be active all the time, accepting slow operation. In constrast, higher power consumption can be allowed for blocks which have to react faster, but can be deactivated most of the time. In the following, the operation principle of the circuit blocks is explained individually in detail. Wherever possible, the blocks are grouped by their functionality, and the explanations refer to their functionality at top level. After all the blocks have been discussed, the top level implementation shows how all these blocks are combined to a top-level design. At the end of the chapter, photographs of the fabricated chip are shown.
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- 1.
One could also imagine to replace the standard low voltage transistor \(\mathrm M _\mathrm N2 \) with a high voltage transistor. But due to the higher gate-drain capacitance of high voltage devices compared to the standard low voltage devices, significant crosstalk is induced into \(V_{X}\), making it impossible to achieve reverse current detection at equal instants for varying supply voltages \(V_{\mathrm {DD}}\) and piezoelectric voltage amplitudes \(\widehat{V}_{P}\).
- 2.
The voltage in parentheses is the absolute maximum rating which could destroy the device when exceeded. According to the process specification document, proper functionality is only ensured when the maximum operating conditions are not exceeded. Operation within the range between the maximum and the absolute maximum ratings, i.e. for voltages between \(18\) and \(20~\mathrm{V}\), may affect reliability, especially for exposure to these voltages for extended periods. Measurements have shown that the fabricated chips can withstand this maximum voltage without any problems.
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Hehn, T., Manoli, Y. (2015). Implementation of the PSCE Circuit on Transistor Level. In: CMOS Circuits for Piezoelectric Energy Harvesters. Springer Series in Advanced Microelectronics, vol 38. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9288-2_5
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DOI: https://doi.org/10.1007/978-94-017-9288-2_5
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