Abstract
TSV (Through Silicon Via) is now a key-technology in the mobile era because it can enable high-performance, hybrid, light-weight, small mobile devices with longer battery lifetimes and low manufacturing costs by reusing IP (intellectual property) and selecting optimized and high-yield, functional chips. This chapter discusses why TSV-based 3D ICs (3 dimensional integrated circuits) are a possible solution for future mobile devices from the perspective of exploiting advantages in their electrical designs. This chapter also provides a brief introduction to the electrical analysis of TSVs based on MIS (Metal-Insulator-Semiconductor) analyses.
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© 2014 Springer Science+Business Media Dordrecht
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Pak, J.S., Kim, J. (2014). Introduction. In: Lee, M., Pak, J., Kim, J. (eds) Electrical Design of Through Silicon Via. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9038-3_1
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DOI: https://doi.org/10.1007/978-94-017-9038-3_1
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