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An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices

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Transactions on Engineering Technologies

Abstract

Nowadays, the tremendous shrinking of electronic devices has reduced their sizes to very low scales. However, this process has been accompanied unavoidably with many well-recognized reliability challenges basically for MOSFET devices. Our objective, in this work, is the proposition of an Adaptive Network based Fuzzy Inference System (ANFIS) to study the threshold voltage behavior caused by the interface traps generated by the ageing mechanism phenomenon. The consideration of a nanoscale DG MOSFET device makes the application of compact modeling tools a very hard task to carry out, due to approximations made during model development. The obtained results are in a good agreement with numerical simulations based on Atlas 2D-simulator. In addition, the comparison with a feed-forward artificial neural network shows that our fuzzy system provides higher accuracy performances. The proposed approach can be incorporated in Integrated Circuit modeling frameworks in order to support more complex degradation situations.

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Author information

Authors and Affiliations

  1. Physics Department, University of Batna, 05000, Batna, Algeria

    Toufik Bentrcia

  2. Electronics Department, University of Batna, 05000, Batna, Algeria

    Fayçal Djeffal

Authors
  1. Toufik Bentrcia
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  2. Fayçal Djeffal
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Correspondence to Fayçal Djeffal .

Editor information

Editors and Affiliations

  1. Department of Multimedia Engineering, College of Engineering, Mokpo National University, Mokpo, Jeonnam, Korea, Republic of (South Korea)

    Gi-Chul Yang

  2. Unit 1, 1/F IAENG Secretariat, International Association of Engine, Hong Kong, Hong Kong SAR

    Sio-Iong Ao

  3. Department of Applied Mathematics and Computing, Cranfield University, Cranfield, Bedfordshire, United Kingdom

    Len Gelman

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Bentrcia, T., Djeffal, F. (2014). An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices. In: Yang, GC., Ao, SI., Gelman, L. (eds) Transactions on Engineering Technologies. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-8832-8_25

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  • DOI: https://doi.org/10.1007/978-94-017-8832-8_25

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-017-8831-1

  • Online ISBN: 978-94-017-8832-8

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