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Recent Results on Broadband Nanotransistor Based THz Detectors

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THz and Security Applications

Abstract

Nanometer size field effect transistors can operate as efficient detectors of terahertz radiation that means far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, circular polarization studies and double grating gate structures of nanometer scale field effect transistors working as terahertz detectors.

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Acknowledgments

We thank Prof. M. Dyakonov for many helpful discussions. This work was supported by ANR project “WITH” and by CNRS and GDR-I project “Semiconductor sources and detectors of THz frequencies” and by the US – French initiative “PUF”. The Montpellier team affiliated with the physics and electronics departments was supported by the “Scientific Interest Groupement” GIS –TERALAB. The work at RPI was supported by the US NSF under the auspices of the NSF EAGER program and by the ARL Cooperative research Agreement.

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Authors and Affiliations

  1. Laboratoire Charles Coulomb UMR 5221 Université Montpellier 2 & CNRS, 24950, Montpellier, France

    Wojciech Knap, Dimitry B. But, N. Dyakonova, D. Coquillat & F. Teppe

  2. Institute of High Pressure Physics UNIPRESS PAN, 02-845, Warsaw, Poland

    Wojciech Knap

  3. Rensselaer Polytechnic Institute, Troy, 12180, New York, USA

    A. Gutin & M. S. Shur

  4. Institute Electronique du Sud Universite Montpellier 2 & CNRS, 34950, Montpellier, France

    O. Klimenko & S. Blin

  5. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    T. Nagatsuma

  6. Terahertz Center, University of Regensburg, Regensburg, 93040, Germany

    S. D. Ganichev

  7. RIEC, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 981-8577, Japan

    T. Otsuji

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  1. Wojciech Knap
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  2. Dimitry B. But
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  5. A. Gutin
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  11. S. D. Ganichev
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Correspondence to Wojciech Knap .

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Editors and Affiliations

  1. C.R.E.O. Centro Ricerche Elettro Ottiche, L'Aquila, Italy

    Carlo Corsi

  2. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    Fedir Sizov

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Knap, W. et al. (2014). Recent Results on Broadband Nanotransistor Based THz Detectors. In: Corsi, C., Sizov, F. (eds) THz and Security Applications. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-8828-1_10

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