Abstract
The channel length of metal oxide semiconductor field effect transistors (MOSFETs) has been continuously and successfully scaled down over the past few decades, at the pace described by Moore’s Law. However, aggressively scaled channel lengths have caused MOSFETs to become more vulnerable to short channel effects (SCEs) and process-induced random variations, as discussed in previous sections. In an attempt to alleviate these undesirable effects, the gate-to-channel capacitance has been increased by using a thinner gate oxide layer in order to enhance gate control over the channel potential.
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Shin, C. (2016). Work Function Variation (WFV). In: Variation-Aware Advanced CMOS Devices and SRAM. Springer Series in Advanced Microelectronics, vol 56. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-7597-7_4
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