Abstract
Stability of cylindrical crystal growth by the Verneuil technique will be analyzed allowing for three degrees-of-freedom: 1) the crystal radius R, 2) the distance between the burner face and the crystallization front l i and 3) the liquid-gas interface position l (Figure I.6). Let the melt meniscus height h = l l — l measured from the interface to the melt peak point and representing the thickness of the melted layer for flat crystallization fronts be introduced for consideration.
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© 1993 Springer Science+Business Media Dordrecht
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Tatarchenko, Y.A. (1993). The Verneuil Technique. In: Shaped Crystal Growth. Fluid Mechanics and Its Applications, vol 20. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-2988-8_5
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DOI: https://doi.org/10.1007/978-94-017-2988-8_5
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-4307-8
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