Abstract
Polydiacetylene crystals with toluene sulfonate side groups (PTS) show a defect absorption which contributes to photoconductivity and gives rise to a strong and narrow electroabsorption peak near 1.75 eV for electric fields and polarization of light parallel b. This defect absorption is not related to oligomers, and only part of it responds to an electric field. It is assumed that the field sensitive defect absorption arises from optical excitation of electrons, localized on the defect, into free electron states.
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© 1985 Springer Science+Business Media Dordrecht
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Weiser, G., Sebastian, L. (1985). Electric-Field Sensitive Defect States in Fully and Partially Polymerized PTS. In: Bloor, D., Chance, R.R. (eds) Polydiacetylenes. NATO ASI Series, vol 102. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-2713-6_16
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DOI: https://doi.org/10.1007/978-94-017-2713-6_16
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