Abstract
As indicated in Ch. 1, the existence of autosolitons in semiconductors and gases in the form of stationary regions where the temperature is very high depends on a certain process of activation which results in a local steep rise in temperature. In the examples of Sect. 1.1 and 1.2 this process of activation proceeds indefinitely as the temperature increases; the maximum possible temperature (that is, the amplitude of spike autosoliton) is contained by the (counteracting) process of inhibition (Fig. 1.1).
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© 1994 Springer Science+Business Media Dordrecht
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Kerner, B.S., Osipov, V.V. (1994). Regions of High or Low Electron Temperature in Heated Semiconductor and Gas Plasmas. In: Autosolitons. Fundamental Theories of Physics, vol 61. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-0825-8_3
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DOI: https://doi.org/10.1007/978-94-017-0825-8_3
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