Abstract
The general specifications required for plasma based ion implantation (PBII) processing are low pressure, large size plasmas, monoatomic ion rich on one hand, high voltage — high current pulse generators on the other hand. To fulfill the plasma requirements, a newly developped distributed electron cyclotron resonance (DECR) plasma source concept is used. To generate high voltage pulses with rise and fall times of the order of the inverse ion plasma frequency and with a duration much larger than the inverse ion plasma frequency, a new type of high voltage generator using a pulse transformer has been developped with many advantages over conventional tube modulators.1
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References
D. M. Goebel (1994) High power modulator For plasma ion implantation. 1. Vac. Sci. Technol. B12 (2), 838
T. Lagarde. 1. Pelletier and Y. Arnal (1997) Plasma Sources Sci. Technol. 6. 53
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© 1999 Springer Science+Business Media Dordrecht
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Le Coeur, F., Arnal, Y., Pelletier, J., Lesaint, O., Maulat, O., Roche, M. (1999). Monoatomic Ion Rich DECR Plasmas for Ion Implantation by Plasma Immersion Using a New High Voltage — High Current Pulse Generator. In: Schlüter, H., Shivarova, A. (eds) Advanced Technologies Based on Wave and Beam Generated Plasmas. NATO ASI Series, vol 67. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-0633-9_32
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DOI: https://doi.org/10.1007/978-94-017-0633-9_32
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-5191-2
Online ISBN: 978-94-017-0633-9
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