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CVD Films

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Book cover Principles of Chemical Vapor Deposition

Abstract

Almost any thin film can be deposited by sputtering or evaporation (physical vapor deposition, PVD); however, conformality of sputtered films is poor, and evaporated films are very nearly line-of-sight. Chemical vapor deposition is of interest whenever films must cover topography, fill trenches or holes. In addition, because CVD films are generally formed by chemical reactions at the film surface, they may have significantly different properties from physical vapor deposited films, which are usually created from individual atoms with all bonds broken impinging on the surfaces. For example, evaporating silicon in high vacuum onto a cool substrate produces an amorphous defective film with little electrical conductivity and no response to introduction of electrical dopants. Deposition of a “silicon” film from silane by low-power plasma-enhanced CVD can create a hydrogenated film with vastly improved electrical properties, including the ability to form p- and n-doped regions and electron mobilities on the order of 1 cm2/v sec: two orders of magnitude worse than crystalline materials but still quite adequate to make useful transistors for flat-panel displays.

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Authors and Affiliations

  1. WJ Communications, Inc., San Jose, CA, USA

    Daniel M. Dobkin

  2. Fused Metals Inc., Georgetown, Ontario, Canada

    Michael K. Zuraw

Authors
  1. Daniel M. Dobkin
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  2. Michael K. Zuraw
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© 2003 Springer Science+Business Media Dordrecht

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Dobkin, D.M., Zuraw, M.K. (2003). CVD Films. In: Principles of Chemical Vapor Deposition. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-0369-7_7

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  • DOI: https://doi.org/10.1007/978-94-017-0369-7_7

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-6277-2

  • Online ISBN: 978-94-017-0369-7

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